초록 ▼

An RF plasma gun has a metal annular support ring at the gun\s nozzle exit port. The ring is conductively mounted to a metal tank containing a substrate to be processed. The substrate is connected to a manipulator which is electrically isolated from the tank. A DC voltage is impressed between the ta

An RF plasma gun has a metal annular support ring at the gun\s nozzle exit port. The ring is conductively mounted to a metal tank containing a substrate to be processed. The substrate is connected to a manipulator which is electrically isolated from the tank. A DC voltage is impressed between the tank, which contains an inert atmosphere at a pressure below that of ambient atmosphere, and the manipulator. The tank is placed at ground potential and the manipulator at a negative potential relative to the tank. The DC voltage creates an electric arc which flows from the exit port ring via the plasma to the substrate for cleaning the substrate.

대표청구항 ▼

An RF plasma system for arc cleaning oxides from the surface of a substrate during RF plasma processing of the substrate comprising: an RF plasma device including a dielectric enclosure defining a chamber for containing a plasma and having a plasma exit port through which said plasma flows, an elect

An RF plasma system for arc cleaning oxides from the surface of a substrate during RF plasma processing of the substrate comprising: an RF plasma device including a dielectric enclosure defining a chamber for containing a plasma and having a plasma exit port through which said plasma flows, an electrical conductor coil adjacent to the enclosure for applying RF energy to a region within the chamber to create a plasma from a gas flowing in the chamber and an electrically conductive member at said port and secured to said enclosure, said member being sufficiently close to said flowing plasma to permit current to flow to the plasma from the member; a substrate support for holding a substrate adjacent to said port for processing by the plasma flowing through the port; and means for providing a direct current (DC) voltage between said member and said substrate support, said voltage having a polarity and magnitude such that an electric arc flows from said member to said substrate via said plasma, said arc being of sufficient intensity to substantially remove said oxides from said substrate during said processing.