초록 ▼

A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and dosage sufficient to distrupt the interface

A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and dosage sufficient to distrupt the interface between the amorphous layer and the substrate and to retard the process of nucleation in subsequent random crystallization upon thermal annealing.

대표청구항 ▼

A method for forming large grain polycrystalline films comprising the steps of providing a layer of insulating material, depositing a layer of amorphous semiconductor material upon said insulating material to form a composite structure, implanting an ion species into said composite structure at an i

A method for forming large grain polycrystalline films comprising the steps of providing a layer of insulating material, depositing a layer of amorphous semiconductor material upon said insulating material to form a composite structure, implanting an ion species into said composite structure at an implant energy and dosage so that the projected range of implantation is in the vicinity of the interface between said amorphous layer and said layer of insulating material so as to disrupt said interface by causing recoil of atoms from said insulating material into said amorphous layer so that said amorphous layer will be energetically less favorable to nucleate and to grow grains when said composite structure is annealed, and annealing said composite structure at a temperature and at a steady state so as to cause random nucleation within said amorphous layer and to form a large grain polycrystalline film at saturation of grain growth within said amorphous layer.