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Metal organic molecular beam epitaxy (MOMBE) apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/52
출원번호 US-0221633 (1988-07-20)
발명자 / 주소
  • Ballingall
  • III James M. (Fayetteville NY) Hersee Stephen D. (Manlius NY)
출원인 / 주소
  • General Electric Company (Syracuse NY 02)
인용정보 피인용 횟수 : 44  인용 특허 : 4

초록

The invention relates to apparatus for epitaxial processing using metal organic molecular beams. The MOMBE apparatus employs a manifold for supplying metal organic vapor to a reactor which is operated under vacuum. The manifold includes a bubbler in which MO vapor is formed and mixed with a carrier

대표청구항

In a Metal Organic Molecular Beam Epitaxy (MOMBE) apparatus, the combination comprising: A. a manifold including (1) a supply line for carrier gas under pressure, (2) a first and a second adjustable mass flow controller with an input and output, the inputs being coupled to said supply line for admit

이 특허에 인용된 특허 (4)

  1. Conger Darrell R. (Portland OR) Posa John G. (Lake Oswego OR) Wickenden Dennis K. (Lake Oswego OR), Apparatus for depositing material on a substrate.
  2. Rose John W. (Scottsdale AZ), Deposition and diffusion source control means and method.
  3. Sato Kazuo (Tokyo JPX), Method for supplying metal organic gas and an apparatus for realizing same.
  4. McMenamin Joseph C. (Oceanside CA), Vapor mass flow control system.

이 특허를 인용한 특허 (44)

  1. Choi, Kenric T.; Narwankar, Pravin K.; Kher, Shreyas S.; Nguyen, Son T.; Deaton, Paul; Ngo, Khai; Chhabra, Paul; Ouye, Alan H.; Wu, Dien-Yeh (Daniel), Ampoule for liquid draw and vapor draw with a continuous level sensor.
  2. Chen, Ling; Ku, Vincent W.; Chung, Hua; Marcadal, Christophe; Ganguli, Seshadri; Lin, Jenny; Wu, Dien Yeh; Ouye, Alan; Chang, Mei, Apparatus and method for generating a chemical precursor.
  3. Campbell Andrew C. (Austin TX), Apparatus for chemical vapor deposition and method of use.
  4. Won, Seok-jun; Yoo, Yong-min; Kim, Dae-youn; Kim, Young-hoon; Kwon, Dae-jin; Kim, Weon-hong, Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus.
  5. Won, Seok-jun; Yoo, Yong-min; Kim, Dae-youn; Kim, Young-hoon; Kwon, Dae-jin; Kim, Weon-hong, Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus.
  6. Won, Seok-jun; Yoo, Yong-min; Kim, Dae-youn; Kim, Young-hoon; Kwon, Dae-jin; Kim, Weon-hong, Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus.
  7. Chen, Ling; Ku, Vincent W.; Chung, Hua; Marcadal, Christophe; Ganguli, Seshadri; Lin, Jenny; Wu, Dien Yeh; Ouye, Alan; Chang, Mei, Chemical precursor ampoule for vapor deposition processes.
  8. Cuvalci, Olkan; Wu, Dien-Yeh; Yuan, Xiaoxiong, Chemical precursor ampoule for vapor deposition processes.
  9. Oosterlaken, Theodorus G. M., Delivery of vapor precursor from solid source.
  10. Chen,Young Kai; Houtsma,Vincent Etienne; Weimann,Nils Guenter, Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames.
  11. Nishino, Kouji; Dohi, Ryousuke; Nagase, Masaaki; Hirata, Kaoru; Sugita, Katsuyuki; Ikeda, Nobukazu, Gas supply system for semiconductor manufacturing facilities.
  12. Furukawahara, Kazunori; Fukuda, Hideaki, Liquid material vaporization apparatus for semiconductor processing apparatus.
  13. Johnson,Ralph H., Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region.
  14. Wen Cheng P. (Mission Viejo CA) Rolph Randy K. (Palos Verdes Estates CA) Zielinski Timothy T. (Torrance CA), MOCVD reactor system for indium antimonide epitaxial material.
  15. Walker, Jay S.; Schneier, Bruce; Jorasch, James A., Method and apparatus for a cryptographically-assisted commercial network system designed to facilitate and support expert-based commerce.
  16. Gold, Ezra Robert; Fovell, Richard Charles; Cruse, James Patrick; Lee, Jared Ahmad; Geoffrion, Bruno; Buchberger, Douglas Arthur; Salinas, Martin J., Method and apparatus for controlling gas flow to a processing chamber.
  17. Gold, Ezra Robert; Fovell, Richard Charles; Cruse, James Patrick; Lee, Jared Ahmad; Geoffrion, Bruno; Buchberger, Douglas Arthur; Salinas, Martin J., Method and apparatus for controlling gas flow to a processing chamber.
  18. Gold, Ezra Robert; Fovell, Richard Charles; Cruse, James Patrick; Lee, Jared Ahmad; Geoffrion, Bruno; Buchberger, Douglas Arthur; Salinas, Martin J., Method and apparatus for controlling gas flow to a processing chamber.
  19. Londergan, Ana R.; Seidel, Thomas E.; Matthysse, Lawrence D.; Lee, Ed C., Method and apparatus for flexible atomic layer deposition.
  20. Ganguli, Seshadri; Chen, Ling; Ku, Vincent W., Method and apparatus for providing precursor gas to a processing chamber.
  21. Ganguli,Seshadri; Chen,Ling; Ku,Vincent W., Method and apparatus for providing precursor gas to a processing chamber.
  22. Chen,Ling; Ku,Vincent W.; Chung,Hua; Marcadal,Christophe; Ganguli,Seshadri; Lin,Jenny; Wu,Dien Yeh; Ouye,Alan; Chang,Mei, Method and apparatus of generating PDMAT precursor.
  23. Shimizu, Akira; Kobayashi, Akiko; Kanayama, Hiroki, Method for controlling flow and concentration of liquid precursor.
  24. Sugiura Hideo (Atsugi JPX) Yamada Takeshi (Atsugi JPX) Iga Ryuzo (Yokohama JPX), Method for forming semiconductor thin films where an argon laser is used to suppress crystal growth.
  25. Ganguli, Seshadri; Chen, Ling; Ku, Vincent W., Method for providing gas to a processing chamber.
  26. Jan Snijders, Gert; Raaijmakers, Ivo, Method for vaporizing non-gaseous precursor in a fluidized bed.
  27. Sato Mitsuo,JPX ; Yoshikawa Kiyoshi,JPX ; Minohoshi Tomio,JPX, Method of fabricating a compound semiconductor having a plurality of layers using a flow compensation technique.
  28. Hashimoto, Shin; Kiyama, Makoto; Sakurada, Takashi; Tanabe, Tatsuya; Miura, Kouhei; Miyazaki, Tomihito, Method of manufacturing group III Nitride Transistor.
  29. Kuwabara Hideshi,JPX ; Kawasumi Yasushi,JPX ; Asaba Tetsuo,JPX ; Makino Kenji,JPX ; Kataoka Yuzo,JPX ; Sekine Yasuhiro,JPX ; Nishimura Shigeru,JPX, Method of treating active material.
  30. Johnson,Ralph H., Migration enhanced epitaxy fabrication of active regions having quantum wells.
  31. Clark, William R., Pulsed mass flow delivery system and method.
  32. Shajii, Ali; Nagarkatti, Siddharth P.; Besen, Matthew Mark; Clark, William R.; Smith, Daniel Alexander; Akgerman, Bora, Pulsed mass flow delivery system and method.
  33. Shajii, Ali; Nagarkatti, Siddharth P.; Besen, Matthew Mark; Clark, William R.; Smith, Daniel Alexander; Akgerman, Bora, Pulsed mass flow delivery system and method.
  34. Shajii, Ali; Nagarkatti, Siddharth P.; Besen, Matthew Mark; Clark, William R.; Smith, Daniel Alexander; Akgerman, Bora, Pulsed mass flow delivery system and method.
  35. Yamasaki, Hideaki; Kawano, Yumiko, Raw material feeding device, film formation system and method for feeding gaseous raw material.
  36. Soininen, Pekka T., Safe liquid source containers.
  37. Soininen,Pekka T., Safe liquid source containers.
  38. Soininen,Pekka T., Safe liquid source containers.
  39. Tuominen, Marko; Shero, Eric; Verghese, Mohith, System for controlling the sublimation of reactants.
  40. Lenz, Eric H., Systems and methods for measuring entrained vapor.
  41. Atlas, Boris; Bichutskiy, Yefim; Bruk, Boris, Temperature control unit for bubblers.
  42. Takahashi, Hideshi; Sato, Yuusuke, Vapor phase growth apparatus, storage container, and vapor phase growth method.
  43. Johnson, Ralph H., Vertical cavity surface emitting laser having strain reduced quantum wells.
  44. Johnson, Ralph H.; Penner, R. Scott; Biard, James Robert, Vertical cavity surface emitting laser with undoped top mirror.
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