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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0284293 (1988-12-14) |
발명자 / 주소 |
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출원인 / 주소 |
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인용정보 | 피인용 횟수 : 386 인용 특허 : 4 |
The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 475-480 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comprises a substrate of alpha silicon carbide ha
The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 475-480 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comprises a substrate of alpha silicon carbide having a first conductivity type and a first epitaxial layer of alpha silicon carbide upon the substrate having the same conductivity type as the substrate. A second epitaxial layer of alpha silicon carbide is upon the first epitaxial layer, has the opposite conductivity type from the first layer, and forms a p-n junction with the first epitaxial layer. In preferred embodiments, the first and second epitaxial layers have carrier concentrations sufficiently different from one another so that the amount of hole current and electron current that flow across the junction under biased conditions are different from one another and so that the majority of recombination events take place in the desired epitaxial layer.
A light emitting diode formed in silicon carbide that emits light in the blue to violet portion of the visible spectrum and comprising: an n-type substrate of alpha-type silicon carbide; an ohmic contact to said substrate; a substantially uncompensated n-type monocrystalline epitaxial layer alpha-ty
A light emitting diode formed in silicon carbide that emits light in the blue to violet portion of the visible spectrum and comprising: an n-type substrate of alpha-type silicon carbide; an ohmic contact to said substrate; a substantially uncompensated n-type monocrystalline epitaxial layer alpha-type silicon carbide upon said n-type substrate; a p-type monocrystalline epitaxial layer of alpha-type silicon carbide upon said n-type epitaxial layer and forming a p-n junction with said n-type layer, said p-type epitaxial layer having a carrier concentration less than the carrier concentration of said uncompensated n-type epitaxial layer; and an ohmic contact to said p-type epitaxial layer, said diode producing a peak emission at a wavelength of between about 455 and 460 nanometers with a spectral half width at peak wavelength of no more than about 50 nanometers.
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