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Laser interferometer system for monitoring and controlling IC processing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01B-011/06
  • H01L-021/306
출원번호 US-0225158 (1988-07-28)
발명자 / 주소
  • Cheng David (San Jose CA) Hartlage Robert P. (Santa Clara CA) Zhang Wesley W. (Burlingame CA)
출원인 / 주소
  • Applied Materials, Inc. (Santa Clara CA 02)
인용정보 피인용 횟수 : 38  인용 특허 : 2

초록

A laser end point detector incorporating adjustable-focus, variable-orientation detection optics for monitoring different types of structures such as laser-transparent thin films, isolated trenches or holes and patterned arrays of trenches or holes is disclosed. A collector lens package comprising a

대표청구항

A laser interferometer system for monitoring the etching of a workpiece, comprising: a laser for providing laser light; and for positioning a workpiece such that laser light from said laser is reflected off of said workpiece; detecting means for detecting laser light reflected from a surface of the

이 특허에 인용된 특허 (2)

  1. Takabayashi Hitoshi (Hachioji JPX) Nakamura Takahiro (Atsugi JPX), Apparatus for measuring thickness of object transparent to light utilizing interferometric method.
  2. Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Kaczorowski Edward M. (Santa Clara CA), Laser interferometer system and method for monitoring and controlling IC processing.

이 특허를 인용한 특허 (38)

  1. Subramanian, Ramkumar; Singh, Bhanwar; Templeton, Michael K., Active control of phase shift mask etching process.
  2. Birang, Manush; Kolte, Gregory L.; Doyle, Terry Lee; Johansson, Nils; Luscher, Paul E.; Poslavsky, Leonid, Apparatus and method for endpoint control and plasma monitoring.
  3. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  4. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  5. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  6. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
  7. Halle Scott D. (Hopewell Junction NY) Hobbs Philip Charles Danby (Briarcliff Manor NY) Mitsui Tadashi (Wappingers Falls NY) van Kessel Theodore G. (Millbrook NY) Wickramasinghe Hemantha Kumar (Chappa, Assembly for measuring a trench depth parameter of a workpiece.
  8. Liu, Yuh-Turng, CMP endpoint detection system.
  9. Jens Stolze DE, Detecting a process endpoint from a change in reflectivity.
  10. Grimbergen Michael N. ; Lill Thorsten B., Endpoint detection for semiconductor processes.
  11. Sui, Zhifeng; Luscher, Paul E; Johansson, Nils; Welch, Michael D, Endpoint detection in substrate fabrication processes.
  12. Michael N. Grimbergen ; Thorsten B. Lill, Endpoint detection in the fabrication of electronic devices.
  13. Wiswesser,Andreas Norbert; Schoenleber,Walter, Endpoint detection with multiple light beams.
  14. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  15. Howald Arthur M. ; Chen Anthony L. ; Schoepp Alan M., High sputter, etch resistant window for plasma processing chambers.
  16. Litvak Herbert E. ; Leach Steven C. ; Rodgers Edward G., Interference removal.
  17. Frum, Coriolan I.; Sui, Zhifeng; Shan, Hongqing, Interferometric endpoint detection in a substrate etching process.
  18. Arthur M. Howald, Interferometric method for endpointing plasma etch processes.
  19. Tanaka,Junichi; Kitsunai,Hiroyuki; Yamamoto,Hideyuki; Kagoshima,Akira; Shiraishi,Daisuke, Method and apparatus for processing semiconductor.
  20. Zaidi, Shoaib Hasan; Mathad, Gangadhara S., Method for monitoring the rate of etching of a semiconductor.
  21. Benz, Jason Michael, Method for thin film laser reflectance correlation for substrate etch endpoint.
  22. Muller K. Paul ; Penner Klaus Dieter,DEX, Method of end point detection using a sinusoidal interference signal for a wet etch process.
  23. Birang, Manoocher; Gleason, Allan; Guthrie, William L., Method of forming a transparent window in a polishing pad.
  24. Wiswesser, Andreas Norbert; Oshana, Ramiel; Hughes, Kerry F.; Rohde, Jay; Huo, David Datong; Benvegnu, Dominic J., Method of making and apparatus having polishing pad with window.
  25. Mundt, Randall S., Methods and apparatuses for trench depth detection and control.
  26. Duboust, Alain; Chang, Shou-Sung; Lu, Wei; Neo, Siew; Wang, Yan; Manens, Antoine P.; Moon, Yongsik, Multi-layer polishing pad for low-pressure polishing.
  27. Tolles, Robert D., Multilayer polishing pad and method of making.
  28. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.
  29. Wiswesser,Andreas Norbert, Polishing pad with window.
  30. Wiswesser,Andreas Norbert, Polishing pad with window.
  31. Wiswesser,Andreas Norbert; Oshana,Ramiel; Hughes,Kerry F.; Rohde,Jay; Huo,David Datong; Benvegnu,Dominic J., Polishing pad with window.
  32. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.
  33. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  34. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  35. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  36. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  37. Schaller, Matthias; Salz, Heike; Richter, Ralf; Mattick, Sylvio, Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategies.
  38. Yoshikawa,Toshiyuki; Tsuchiya,Toshio, Wafer processing method.
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