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A semiconductor integrated circuit device includes a high performance interconnect structure which comprises a plurality of interconnects, with each interconnect being structurally separated from the remaining interconnects except at electrical contact points. In one embodiment, each interconnect is

A semiconductor integrated circuit device includes a high performance interconnect structure which comprises a plurality of interconnects, with each interconnect being structurally separated from the remaining interconnects except at electrical contact points. In one embodiment, each interconnect is substantially surrounded by a layer of dielectric material, there being gaps between each adjacent layer of surrounding dielectric material. Another embodiment, a layer of electrically conductive material is formed over the surrounding dielectric layer preferably filling in the gaps between adjacent layers of surrounding dielectric material. The layer of electrically conductive material acts as a ground plane and heat sink.

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A semiconductor integrated circuit device including an interconnect structure for electrically connecting regions in a semiconductor substrate, said interconnect structure comprising: a plurality of interconnects, each interconnect being structurally separated from other interconnects except at elec

A semiconductor integrated circuit device including an interconnect structure for electrically connecting regions in a semiconductor substrate, said interconnect structure comprising: a plurality of interconnects, each interconnect being structurally separated from other interconnects except at electrical contact points, each of said interconnects being substantially enclosed in a respective dielectric layer disposed therearound except at said electrical contact points, each of said respective dielectric layers having a surrounding outer surface, and said outer surface of said respective dielectric layer of each interconnect being physically separated in all directions from the outer surface of the respective dielectric layers of the other interconnects by an air gap except at said electrical contact points.