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A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucible is produced wh

A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucible is produced while the substrate is supported by a rotating mould by forming an atmosphere of high temperature gas and supplying a metered quantity of powders of quartz to the high temperature gas atmosphere to have the quartz powders molten at least partly and directed toward an inner surface of the substrate to be adhered thereon.

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Method for producing quartz crucible comprising steps of providing a crucible substrate made of silicon dioxide having a high bubble content, rotating said substrate in a condition disposed in mould means and forming a high temperature gas atmosphere in said substrate, supplying powders of silicon d

Method for producing quartz crucible comprising steps of providing a crucible substrate made of silicon dioxide having a high bubble content, rotating said substrate in a condition disposed in mould means and forming a high temperature gas atmosphere in said substrate, supplying powders of silicon dioxide to said high temperature atmosphere to have the silicon dioxide powders molten at least partly and having said silicon dioxide powders directed toward an inner surface of said substrate so that the silicon dioxide powders in at least partly molten form are deposited on the inner surface of the substrate to form a transparent quartz glass layer on said inner surface of the substrate, said transparent quartz glass layer being of a predetermined thickness and substantially free from bubbles.