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Arrangement for producing a gas flow which is enriched with the vapor of a low-volatile substance 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0295716 (1989-01-10)
우선권정보 DE-3801147 (1988-01-16)
발명자 / 주소
  • Grtner Georg (Aachen DEX) Janiel Peter (Wrselen DEX) Rau Hans (Aachen DEX)
출원인 / 주소
  • U.S. Philips Corporation (New York NY 02)
인용정보 피인용 횟수 : 37  인용 특허 : 0

초록

An arrangement for producing a gas flow which is enriched with the vapor of a low-volatile material. The arrangement comprises a vessel (1) having an interior space (12) for holding a powder bed (13), which consists of a low-volatile material and an additional solid inert component. The vessel is ar

대표청구항

A heatable arrangement for producing a gas flow which is enriched with the vapour of a low-volatile, pulverulent substance, and which gas flow comprises an inert gas, the arrangement comprising: a vessel having an interior space (12) for holding a powder bed a powder bed (13) comprising said low-vol

이 특허를 인용한 특허 (37)

  1. Nolan, James F., Apparatus and method for depositing a material on a substrate.
  2. Powell Ricky C. ; Dorer Gary L. ; Reiter Nicholas A. ; McMaster Harold A. ; Cox Steven M. ; Kahle Terence D., Apparatus and method for depositing a semiconductor material.
  3. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  4. Chen, Ling; Ku, Vincent W.; Chang, Mei; Wu, Dien Yeh; Chung, Hua, Apparatus for hybrid chemical processing.
  5. Klinedinst Keith A. (Marlborough MA) Lester Joseph E. (Lincoln MA), Apparatus for the controlled delivery of vaporized chemical precursor to an LPCVD reactor.
  6. Timmons, Michael L.; Colby, Richard J.; Stennick, Robert S., Bubbler.
  7. Tran, Nam Hung; Deavenport, Dennis L.; Ko, Taeho; El-Zein, Nada, Bubbler for constant vapor delivery of a solid chemical.
  8. Cunning, Hugh; Williams, Graham; Odedra, Rajesh; Kanjolia, Ravi, Bubbler for the transportation of substances by a carrier gas.
  9. Nguyen, Son T.; Sangam, Kedarnath; Schwartz, Miriam; Choi, Kenric; Bhat, Sanjay; Narwankar, Pravin K.; Kher, Shreyas; Sharangapani, Rahul; Muthukrishnan, Shankar; Deaton, Paul, Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system.
  10. Shenai-Khatkhate, Deodatta Vinayak; Timmons, Michael L.; Marsman, Charles J.; Woelk, Egbert; DiCarlo, Jr., Ronald L., Delivery device.
  11. Oosterlaken, Theodorus G. M., Delivery of vapor precursor from solid source.
  12. Onoe Atsushi,JPX ; Yoshida Ayako,JPX ; Chikuma Kiyofumi,JPX, Device for feeding raw material for chemical vapor phase deposition and method therefor.
  13. Sri Prakash Rangarajan ; John O'Grady, Dual fritted bubbler.
  14. Shero, Eric J.; Verghese, Mohith; Maes, Jan Willem, High concentration water pulses for atomic layer deposition.
  15. Hehmann Franz,DEX, Industrial vapor conveyance and deposition.
  16. Hehmann, Franz, Industrial vapor conveyance and deposition.
  17. Furukawahara, Kazunori; Fukuda, Hideaki, Liquid material vaporization apparatus for semiconductor processing apparatus.
  18. Allen Michael B. ; Swartz Dennis C. ; Lee Patrick B., Low pressure chemical vapor deposition apparatus including a process gas heating subsystem.
  19. J?rgensen, Holger; Strauch, Gerhard Karl; Schwambera, Markus, Method and device for depositing in particular organic layers using organic vapor phase deposition.
  20. Birtcher,Charles Michael; Dunning,Richard J.; Clark,Robert Daniel; Hochberg,Arthur Kenneth; Steidl,Thomas Andrew, Method and vessel for the delivery of precursor materials.
  21. Tuominen, Marko; Shero, Eric; Verghese, Mohith, Method for controlling the sublimation of reactants.
  22. Jan Snijders, Gert; Raaijmakers, Ivo, Method for vaporizing non-gaseous precursor in a fluidized bed.
  23. Myo, Nyi Oo; Cho, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Methods for atomic layer deposition of hafnium-containing high-K dielectric materials.
  24. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E.; White, Carl L., Precursor delivery system.
  25. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E; White, Carl L, Precursor delivery system.
  26. Soininen, Pekka T., Safe liquid source containers.
  27. Soininen,Pekka T., Safe liquid source containers.
  28. Soininen,Pekka T., Safe liquid source containers.
  29. Cao, Wei; Chung, Hua; Ku, Vincent W.; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  30. Cao, Wei; Chung, Hua; Ku, Vincent; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  31. Kanjolia, Ravi; Platts, Chris; Nguyen, Nam; Wilkinson, Mark, Solid precursor delivery assemblies and related methods.
  32. Birtcher, Charles Michael; Steidl, Thomas Andrew, Solid source container with inlet plenum.
  33. Lee, Myung Gi; Lee, Yong Eui; Kim, Un Jung, Source container and vapour-deposition reactor.
  34. Shero,Eric J.; Givens,Michael E.; Schmidt,Ryan, Sublimation bed employing carrier gas guidance structures.
  35. Tuominen, Marko; Shero, Eric; Verghese, Mohith, System for controlling the sublimation of reactants.
  36. Tuominen, Marko; Shero, Eric; Verghese, Mohith, System for controlling the sublimation of reactants.
  37. Gelatos, Avgerinos V.; Lee, Sang-Hyeob; Yuan, Xiaoxiong; Umotoy, Salvador P.; Chang, Yu; Tzu, Gwo-Chuan; Renuart, Emily; Lin, Jing; Lai, Wing-Cheong; Le, Sang Q., Temperature controlled lid assembly for tungsten nitride deposition.
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