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Method and apparatus for monitoring layer erosion in a dry-etching process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01B-011/06
출원번호 US-0373883 (1989-06-30)
우선권정보 DE-3901017 (1989-01-14)
발명자 / 주소
  • Enke Knut (Johannesberg DEX) Hussla Ingo (Hanau DEX) Lorenz Gerhard (Alzenau DEX)
출원인 / 주소
  • Leybold Aktiengesellschaft (DEX 03)
인용정보 피인용 횟수 : 32  인용 특허 : 2

초록

A method and apparatus for monitoring layer erosion in a dry-etching process. The apparatus has a first electrode that is electrically connected to a substrate to be etched, as well as a second electrode that is located above the first electrode. Both electrodes are situated inside a process chamber

대표청구항

A method for monitoring layer erosion of layers on at least one substrate in a dry-etching process, having a first electrode that electrically contacts the substrate to be etched and a second electrode that is located above the first electrode, both electrodes being situated inside a process chamber

이 특허에 인용된 특허 (2)

  1. Otsubo Toru (Fujisawa JPX) Aiuchi Susumu (Yokohama JPX) Kamimura Takashi (Yokohama JPX), Etching method and apparatus.
  2. Kuyel Birol (Hopewell Township ; Mercer County NJ), Technique for determining the end point of an etching process.

이 특허를 인용한 특허 (32)

  1. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  2. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  3. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  4. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
  5. Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
  6. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.
  7. Ben-Dov, Yuval; Sarfaty, Moshe; Garachtchenko, Alexander Viktorovich, Detection of process endpoint through monitoring fluctuation of output data.
  8. Weiler, Manfred; Dahl, Roland, High frequency plasma source.
  9. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  10. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  11. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  12. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  13. Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  14. Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  15. Frakso Fatima,FRX ; Bosmans Richard,FRX ; Nouvelot Luc,FRX, Method and device for in situ stress measurement within a thin film upon its deposition on a substrate.
  16. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
  17. Tsuji, Yukihiro, Method for producing semiconductor device.
  18. Wu,I Wen; Tseng,Chen Chiu, Method of fabricating semiconductor integrated circuits.
  19. Johnson, David, Optical emission interferometry for PECVD using a gas injection hole.
  20. Litvak Herbert E., Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.
  21. Litvak Herbert E., Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.
  22. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.
  23. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
  24. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.
  25. Chalmers Scott A. ; Geels Randall S., Rapid and accurate end point detection in a noisy environment.
  26. Chalmers Scott A., Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample.
  27. Chalmers Scott A. ; Geels Randall S., Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources.
  28. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  29. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  30. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  31. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  32. Subramanian, Ramkumar; Singh, Bhanwar; Templeton, Michael K., Using scatterometry for etch end points for dual damascene process.
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