초록 ▼

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as CdxZn1-xTe (0≤x≤1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as CdxZn1-xTe (0≤x≤1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.

대표청구항 ▼

A method of forming a Group IIB metal-telluride film on a substrate comprising: (a) depositing a layer consisting essentially of tellurium and a Group IIB metallic layer consisting essentially of at least one of the elements selected from the group consisting of cadmium, zinc, and mercury on said su

A method of forming a Group IIB metal-telluride film on a substrate comprising: (a) depositing a layer consisting essentially of tellurium and a Group IIB metallic layer consisting essentially of at least one of the elements selected from the group consisting of cadmium, zinc, and mercury on said substrate and including a Group IIB halide selected from the group consisting of chlorides, iodides, bromides, and fluorides of cadmium, zinc, and mercury in said layers; and (b) heating said layers to cause a reaction, thereby forming a single layer comprising said Group IIB metal-telluride.