초록 ▼

A layer of titanium carbosilicide Ti3SiC2 on a silicon carbide surface polished for making a joint makes it possible to join silicon carbide bodies together in a hot pressing procedure and obtaining a joint strength comparable to the strength of the silicon carbide material. Such a layer on silicon

A layer of titanium carbosilicide Ti3SiC2 on a silicon carbide surface polished for making a joint makes it possible to join silicon carbide bodies together in a hot pressing procedure and obtaining a joint strength comparable to the strength of the silicon carbide material. Such a layer on silicon carbide also makes possible brazed juoints with steel alloy or nickel based alloy parts. The layer may be applied directly by a powder dispersion in a volatile but viscous glycol or by sputtering or else the layer can be made in place from a powder mixture of components, especially TiC0,8 and Tisi2 (5:1) or a titanium layer of a thickness in the range of 1 to 3 m3SiC2. Alternatively a Ti3SiC 2 surface layer can be formed by a sputtering process. The Ti3SiC2 layer favors brazing of the metal part to the silicon carbide surface as treated. The heating requires reaching a temperature in the region from 1200°to 1600°C. for periods between a half hour to about three hours in the presence of a reducing protective gas.

대표청구항 ▼

Process for bonding a first molded body of silicon carbide to a second molded body of silicon carbide, said first and second bodies having respective surfaces to be joined which match each other in configuration, said process comprising the steps of: interposing a Ti3SiC2 layer between and in contac

Process for bonding a first molded body of silicon carbide to a second molded body of silicon carbide, said first and second bodies having respective surfaces to be joined which match each other in configuration, said process comprising the steps of: interposing a Ti3SiC2 layer between and in contact with said matching surfaces of said first and second bodies, and heating and hot-pressing said bodies and their said matching surfaces together with said Ti3 SiC2 layer interposed between them in the presence of a reducing protective gas at a temperature in the range from 1200°to 1600°C. for at least 30 minutes with pressing of said bodies together with a pressure from 5 to 100 MPa, and thereby firmly joining said first and second bodies at their said matching surfaces. Process for bonding a first molded body of silicon carbide to a second molded body of silicon carbide, said first and second bodies having respective surfaces to be joined which match each other in configuration, said process comprising the steps of: preliminarily polishing said matching surfaces of said bodies; applying to at leat one of them a titanium layer having a thickness greater than 1m3m1200°to 1600°C. for at least 30 minutes with pressing of said bodies together with a pressure from 5 to 100 MPa thus causing said titanium layer to be converted into a persistent Ti3SiC2 layer which firmly joins said first and second bodies at their said matching surfaces.