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Process for fabricating multi-level integrated circuit wiring structure from a single metal deposit 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-005/00
출원번호 US-0337807 (1989-04-14)
발명자 / 주소
  • Cronin John E. (Milton VT) Lee Pei-ing P. (Williston VT)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 152  인용 특허 : 0

초록

A process of forming a multi-level semiconductor metallization structure from a single deposit layer of metal. The process provides the versatility of allowing stud-up, stud-down, thick and/or thin metallization structure lines to be formed from the single layer of metal. The thick metallization str

대표청구항

A process for forming a multi-level metallization structure on a processed semiconductor substrate, comprising the steps of: forming a planar insulating layer on said processed semiconductor substrate; masking and etching said planar insulating layer to form a plurality of wiring troughs in an upper

이 특허를 인용한 특허 (152)

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