초록 ▼

An improved double implanted and aligned LDD transistor comprising a gate having a central alignment member and a pair of outboard alignment members having portions contiguous with the gate oxide layer. A lightly doped junction is aligned with the central alignment member and a heavily doped junctio

An improved double implanted and aligned LDD transistor comprising a gate having a central alignment member and a pair of outboard alignment members having portions contiguous with the gate oxide layer. A lightly doped junction is aligned with the central alignment member and a heavily doped junction is aligned with the outboard alignment members.

대표청구항 ▼

A method for fabricating LDD transistor devices comprising the steps of: providing a semiconductor substrate of a first conductivity type, forming a gate insulating film on said semiconductor substrate, forming a thin conductive layer upon said gate insulating film, forming a thick alignment member

A method for fabricating LDD transistor devices comprising the steps of: providing a semiconductor substrate of a first conductivity type, forming a gate insulating film on said semiconductor substrate, forming a thin conductive layer upon said gate insulating film, forming a thick alignment member upon said thin conductive layer, doping said substrate to a first impurity concentration through said thin conductive layer, in alignment with said thick alignment member, with an impurity having a conductivity type opposite to that of said semiconductor substrate, so as to form a first doped region, depositing sidewall spacers upon said thin conductive layer on either side of said thick alignment member, doping said substrate to a second impurity concentration, higher than said first impurity concentration, in alignment with said sidewall spacers, with an impurity having a conductivity type opposite to that of said semiconductor substrate, so as to form a second doped region removing portions of said thin conductive layer outboard of said sidewall spacers, and thermally treating the substrate for electrically activating said impurities.