SiC complex sintered bodies and production thereof
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0222554
(1988-07-21)
|
우선권정보 |
JP-0186753 (1987-07-28); JP-0244161 (1987-09-30) |
발명자
/ 주소 |
- Kawasaki Shinji (Nagoya JPX)
|
출원인 / 주소 |
- NGK Insulators, Ltd. (JPX 03)
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인용정보 |
피인용 횟수 :
2 인용 특허 :
4 |
초록
▼
A silicon carbide complex sintered body including 20 to 99 wt % of SiC, 80 to 0.5 wt % of at least one compound selected from the group consisting of W2B5 and/or MoB2, and 0.5 to 5 wt % of at least one material selected from the group consisting of boron, carbon, and boron carbide. A process for pro
A silicon carbide complex sintered body including 20 to 99 wt % of SiC, 80 to 0.5 wt % of at least one compound selected from the group consisting of W2B5 and/or MoB2, and 0.5 to 5 wt % of at least one material selected from the group consisting of boron, carbon, and boron carbide. A process for producing the sintered body by preparing a mixed powder is also disclosed, wherein the mixed powder includes 20 to 99 wt % of SiC powder having an average particle diameter of not greater than 5 microns, 80 to 0.5 wt % of at least one compound selected from the group consisting of W2B5 and MoB2, and 0.1 to 5 wt %, when calculated as boron, of boron or a compound containing boron, and 0.1 to 5 wt %, when calculated as carbon, molding the mixture, and firing the molding in a temperature range from 1,900°to 2,500°C. in vacuum or in an inert atmosphere.
대표청구항
▼
A pressureless sintered silicon carbide complex sintered body consisting essentially of 20 to 99 wt% of SiC, 70 to 5 wt% of W2B5, and 0.5 to 5 wt% of at least one material selected from the group consisting of boron, carbon, and boron carbide. A pressureless sintered silicon carbide complex sintered
A pressureless sintered silicon carbide complex sintered body consisting essentially of 20 to 99 wt% of SiC, 70 to 5 wt% of W2B5, and 0.5 to 5 wt% of at least one material selected from the group consisting of boron, carbon, and boron carbide. A pressureless sintered silicon carbide complex sintered body consisting essentially of 20 to 99 wt % of SiC, 70 to 0.5 wt % of MoB2, and 0.5 to 5 wt % of at least one material selected from the group consisting of boron, carbon, and boron carbide, wherein said sintered body consists crystalline phases of MoB2 and SiC.
이 특허에 인용된 특허 (4)
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Kosugi Tetsuo (Toukai JPX), Ceramic structure having thermal shock resistance.
-
Matsushita, Yasuo; Nakamura, Kousuke; Harada, Koji, Electrically conductive sintered ceramics and ceramic heaters.
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Honma, Katsuhiko; Tatsuno, Tsuneo; Okada, Hiroshi, Method for producing high strength sintered silicon carbide.
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Prochazka Svante (Ballston Lake NY), Process for preparing semiconducting silicon carbide sintered body.
이 특허를 인용한 특허 (2)
-
Zhang, Shi C.; Hilmas, Gregory E.; Fahrenholtz, William G., High-density pressurelessly sintered zirconium diboride/silicon carbide composite bodies and a method for producing the same.
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Zhang, Shi C.; Hilmas, Gregory E.; Fahrenholtz, William G., Method for pressurelessly sintering zirconium diboride/silicon carbide composite bodies to high densities.
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