초록 ▼

Pure-green light emitting diodes include an n-type GaP layer formed on an n-type GaP substrate and a p-type GaP layer formed by using a liquid phase epitaxial method, the average donor concentration of the p-type GaP layer being less than or equal to 5×1016 cm-3. Liquid phase crystal growth of the a

Pure-green light emitting diodes include an n-type GaP layer formed on an n-type GaP substrate and a p-type GaP layer formed by using a liquid phase epitaxial method, the average donor concentration of the p-type GaP layer being less than or equal to 5×1016 cm-3. Liquid phase crystal growth of the above p-type GaP layer is realized by applying a method of keeping the melt used for the liquid phase crystal growth of the n-type GaP layer at a constant temperature and the ambient atmosphere at a reduced pressure for a prescribed period of time thereby to volatilize donor impurities from the melt and to compensate the donor impurities. Pure-green light emitting diodes easily distinguishable from yellow-green and having high brightness can be manufactured by applying the over-compensation method which is suitable for mass production.

대표청구항 ▼

A pure green light emitting diode, comprising: an n-type gallium phosphide substrate; an n-type gallium phosphide epitaxial layer, said n-type layer being formed overlying said substrate as a liquid phase epitaxial layer; and a p-type gallium phosphide epitaxial layer grown by a liquid phase epitaxi

A pure green light emitting diode, comprising: an n-type gallium phosphide substrate; an n-type gallium phosphide epitaxial layer, said n-type layer being formed overlying said substrate as a liquid phase epitaxial layer; and a p-type gallium phosphide epitaxial layer grown by a liquid phase epitaxial process on said n-type layer, said p-type layer containing donor impurities in an average donor concentration less than or equal to 5×1016 cm-3, such that brightness of said pure green light emitting diode attains a predetermined high brightness value with an emission peak wavelength of 555 nm.