초록 ▼

A cyclotron resonance chemical vapor deposition method of making a boron nitride or a boron nitride in combination with carbon on a substrate, characterized by the use of a higher pressure range of 0.1 to 300 torr, where the substrate is substantially positioned where a standing wave of the applied

A cyclotron resonance chemical vapor deposition method of making a boron nitride or a boron nitride in combination with carbon on a substrate, characterized by the use of a higher pressure range of 0.1 to 300 torr, where the substrate is substantially positioned where a standing wave of the applied microwave established in a reaction chamber attains a maximum value.

대표청구항 ▼

A cyclotron resonance chemical vapor deposition method of forming a product comprising (a) boron nitride or (b) boron nitride in combination with carbon on a substrate comprising: inputting at least one reactive gas comprising at least boron and nitrogen and optionally carbon into a reaction chamber

A cyclotron resonance chemical vapor deposition method of forming a product comprising (a) boron nitride or (b) boron nitride in combination with carbon on a substrate comprising: inputting at least one reactive gas comprising at least boron and nitrogen and optionally carbon into a reaction chamber; emitting a microwave into said reaction chamber at a predetermined frequency and in a predetermined direction; establishing a magnetic field in said reaction chamber where the direction of the magnetic field is substantially parallel to the direction of the microwave and the strength of the magnetic field is such as to cause cyclotron resonance at a predetermined position in the reaction chamber; exhausting the reaction chamber to establish in the chamber a pressure range of 0.1 to 300 Torr; and holding the substrate approximately at said predetermined, cyclotron resonance position in the reaction chamber; and depositing (a) the boron nitride or (b) the boron nitride in combination with carbon on a surface of the substrate.