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In a method for fabricating a MOS device, a nitride cap is formed over a remote interconnect of gate material. In a subsequent oxide growth step, oxide is formed over another remote interconnect and transistor gates, while the nitride cap prevents oxide growth over the first remote interconnect. Thi

In a method for fabricating a MOS device, a nitride cap is formed over a remote interconnect of gate material. In a subsequent oxide growth step, oxide is formed over another remote interconnect and transistor gates, while the nitride cap prevents oxide growth over the first remote interconnect. Thinner oxide over source and drain regions is removed, leaving oxide formations over the gates and the second interconnect; the nitride cap is also removed. Silicide is then formed over the source and drain regions and over portions of the first remote interconnect. A conducting layer is deposited and a local interconnect is then patterned therefrom which electrically connects the first remote interconnect to at least one source/drain region without using via holes. This local interconnect crosses over the second remote interconnect, while being insulated from it by the oxide formation. The result of the method is an integrated circuit device with this bridging interconnect and compact dimensions, the latter due to the relaxed tolerances afford by the self-aligning features of the method.

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A method of forming a bridging interconnect between a current-carrying region of a transistor and a connection conductor so that said interconnect crosses without electrically contacting an intermediate noncontacting conductor, said current-carrying region being formed in a semiconductor substrate,

A method of forming a bridging interconnect between a current-carrying region of a transistor and a connection conductor so that said interconnect crosses without electrically contacting an intermediate noncontacting conductor, said current-carrying region being formed in a semiconductor substrate, said connection conductor and said noncontacting conductor being formed on said substrate, said method comprising the steps of: (a) at least partially covering said connection conductor with an oxide-retarding material which inhibits the growth of an oxide on said conductor; (b) growing an oxide on the structure defined by step (a) so as to form a relatively thick oxide cover over said noncontracting conductor, and a relatively thin oxide over said current-carrying region; (c) etching the oxide grown in step (b) sufficiently to remove oxide from over said current-carrying region while limiting etching so that said relatively thick oxide cover over said noncontacting conductor is not completely removed; (d) at least partially removing said oxide-retarding material from over said connection conductor; (e) depositing a sinterable metal over the structure defined by step (d); (f) sintering the sinterable metal deposited in step (e) so that it sinters with said current-carrying region and said connection conductor, said metal not sintering where it contacts oxide; (g) removing unsintered metal; and (h) defining a conductor extending from sintered metal over said current-carrying region to over said connection conductor; whereby, said sintered metal electrically connects said current-carrying region and said connection conductor, while remaining insulated from said noncontacting conductor by oxide grown in step (b) and not removed in step (c).