초록 ▼

A light emitting semiconducting structure is formed over a light reflecting surface using epitaxial growth techniques. The light reflecting surface is provided by an appropriate metal layer intermediately disposed between two dielectric layers, this multi-layer structure is disposed intermediate bet

A light emitting semiconducting structure is formed over a light reflecting surface using epitaxial growth techniques. The light reflecting surface is provided by an appropriate metal layer intermediately disposed between two dielectric layers, this multi-layer structure is disposed intermediate between an underlying substrate and the overlaying light emitting semiconducting components. The light reflecting surface provides enhanced photon reflectance for the light emitting device. The active region of the light emitting device is formed using epitaxial growth techniques.

대표청구항 ▼

A light emitting semiconducting structure comprising: a substrate of appropriate material, conductivity, and cystallographic orientation; patterned regions of a reflecting structure, said reflecting structure comprising a metal reflecting layer intermediately disposed between two dielectric layers;

A light emitting semiconducting structure comprising: a substrate of appropriate material, conductivity, and cystallographic orientation; patterned regions of a reflecting structure, said reflecting structure comprising a metal reflecting layer intermediately disposed between two dielectric layers; epitaxially grown material from said substrate, said epitaxially grown material being provided continuously in at least one channel which contacts said substrate and laterally over said reflecting structure to form an active region; and appropriate electrical contacts sufficient to provide a light emitting semiconductive structure overlaying said epitaxially grown active region.