초록 ▼

The present invention relates to a method for biasing and making conductive an insulated gate semiconductor device having main electrodes at both surfaces of a semiconductor substrate and a gate electrode at one surface. Charges are accumulated between the gate electrode and the main electrode at th

The present invention relates to a method for biasing and making conductive an insulated gate semiconductor device having main electrodes at both surfaces of a semiconductor substrate and a gate electrode at one surface. Charges are accumulated between the gate electrode and the main electrode at the opposite surface while a voltage is applied across the electrodes storing a charge. The element is made conductive by discharging the accumulated charges when a voltage is applied in the conductive direction to such semiconductor element. The device can be used to drive the primary side of an ignition system in an internal combustion engine.

대표청구항 ▼

A method for providing electrical energy to an ignition plug of an internal combustion engine, utilizing an insulated gate semiconductor device of the type having gate and first main electrodes at the surface of a semiconductor substrate, a second main electrode at a second substrate surface, and a

A method for providing electrical energy to an ignition plug of an internal combustion engine, utilizing an insulated gate semiconductor device of the type having gate and first main electrodes at the surface of a semiconductor substrate, a second main electrode at a second substrate surface, and a gate, to second main electrode capacitance which is a multiple of the gate to first main electrode capacitance under low voltage conditions, comprising the steps of: (a) rotating a flywheel magnet through the field of an ignition coil alternately to generate voltages of a first and reverse polarity in the primary winding of said coil; (b) accumulating a charge between said gate and second main electrodes in response to a first voltage coupled across said main electrodes in a non-conductive polarity; (c) preventing leakage of said charge as it accumulates by providing electrical isolation for charges of the resulting polarity; (d) causing the accumulated charge to discharge charge between said gate and first main electrodes in response to the reverse voltage applied across said main electrodes, thereby temporarily biasing said gate electrode to a potential adequate to cause the semiconductor device to enter a conductive state; (e) causing said semiconductor device to rapidly change from a conductive to a non-conductive state, thereby generating an increased voltage in the primary winding of said ignition coil; and (f) coupling resulting energy generated in the secondary winding of said coil to the ignition plug of the engine.