초록 ▼

An apparatus for the implementation of plasma etching processes providing a process chamber, an upper electrode, and a lower electrode. The upper electrode comprises an anode member, movable with respect to the process chamber, and provides a gas shower for delivering a highly reactive gas, such as

An apparatus for the implementation of plasma etching processes providing a process chamber, an upper electrode, and a lower electrode. The upper electrode comprises an anode member, movable with respect to the process chamber, and provides a gas shower for delivering a highly reactive gas, such as a gas containing fluorine or chlorine, into the process chamber. The lower electrode provides a surface for holding a substrate to be etched, the lower electrode being supplied with a high-frequency negative voltage and cooled by an outside source. The process chamber is shaped to press the substrate to the lower electrode when the process chamber is lowered upon the substrate in preparation for operation. The process chamber presses the substrate around a continuous periphery of the substrate. The process chamber is provided with exhaust gas export holes which can be progressively aligned with matching holes in a perforated disk rotatably mounted to an outside surface of the process chamber. An accordion bellows seals the interface between the first electrode stem and process chamber, to prevent penetration of particles into the process chamber. The above-described apparatus is all preferably situated in a vacuum chamber.

대표청구항 ▼

An apparatus for plasma etching of a substrate comprising: a process chamber wherein said substrate is etched, said process chamber having a gas conducting connection for receiving a process gas therein from an outside source, said process chamber comprising an enclosure having a bottom plate with a

An apparatus for plasma etching of a substrate comprising: a process chamber wherein said substrate is etched, said process chamber having a gas conducting connection for receiving a process gas therein from an outside source, said process chamber comprising an enclosure having a bottom plate with a central etching window therethrough; a first electrode, facing the interior of said chamber for facing a first face of said substrate; a second electrode facing the interior of said chamber for facing a second face of said substrate, said second electrode maintained at an electric potential different from said first electrode, said second electrode in heat transfer with an external source, said second electrode positioned so as to support said substrate against said bottom plate, and provide a central etching area of said substrate exposed to an interior of said chamber through said central etching window of said bottom plate; and the weight of said process chamber being such so as to press said bottom place down upon a continuous periphery of said substrate, and press said substrate against said second electrode.