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Method and apparatus for treating objects in a closed vessel with a solvent 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B08B-003/02
  • B08B-003/08
  • B08B-003/10
출원번호 US-0332274 (1989-03-09)
우선권정보 DE-3725565 (1987-08-01)
국제출원번호 PCT/EP88/00671 (1988-07-21)
§371/§102 date 19890309 (19890309)
국제공개번호 WO-8901057 (1989-02-09)
발명자 / 주소
  • Weil Peter (Helene-Mayer-Ring 10 D-8000 Munich DEX)
인용정보 피인용 횟수 : 52  인용 특허 : 1

초록

In a method, especially for stripping enamel and removing coatings from objects, the advantages of a solvent treatment are to be retained, without having to put up with the disadvantages of contaminating the environment. This is accomplished essentially by using in a closed treating vessel a treatin

대표청구항

In a method for the treatment of objects in a closed vessel with solvents for stripping enamel and removing coatings from the objects, in which the objects to be treated are treated for at least part of the time by immersion in solvents and subsequently washed by spraying in a solvent-free region of

이 특허에 인용된 특허 (1)

  1. Prisco ; Jr. Anthony J. (Beverly NJ) Sewter Bruce R. (Pernherton Township ; Burlington County NJ) Briggs William E. (Beverly NJ) Archer Gary L. (Mount Holly NJ), Apparatus for recovering solvent.

이 특허를 인용한 특허 (52)

  1. Hill ; III Walter E. (Littleton CO) Skulborstad Dale J. (Littleton CO) Howard ; Jr. John B. (Littleton CO) Marts Kenneth P. (Morrsion CO), Alcohol spray cleaning system.
  2. Yokomizo,Kenji, Apparatus and method of securing a workpiece during high-pressure processing.
  3. Jur, Jesse Stephen; McCullough, Kenneth J.; Moreau, Wayne Martin; Simons, John Patrick; Taft, Charles Jesse, Apparatus and process for supercritical carbon dioxide phase processing.
  4. Jur, Jesse Stephen; McCullough, Kenneth J.; Moreau, Wayne Martin; Simons, John Patrick; Taft, Charles Jesse, Apparatus and process for supercritical carbon dioxide phase processing.
  5. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.
  6. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.
  7. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.
  8. Arena Foster,Chantal J.; Awtrey,Allan Wendell; Ryza,Nicholas Alan; Schilling,Paul, Developing photoresist with supercritical fluid and developer.
  9. Arena-Foster, Chantal J.; Awtrey, Allan Wendell; Ryza, Nicholas Alan; Schilling, Paul, Developing photoresist with supercritical fluid and developer.
  10. Arena-Foster, Chantal J.; Awtrey, Allan Wendell; Ryza, Nicholas Alan; Schilling, Paul, Drying resist with a solvent bath and supercritical CO2.
  11. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.
  12. Jones, William D., High pressure fourier transform infrared cell.
  13. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.
  14. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.
  15. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  16. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  17. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.
  18. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.
  19. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.
  20. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.
  21. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.
  22. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.
  23. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.
  24. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.
  25. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
  26. Biberger, Maximilian A.; Schilling, Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.
  27. Biberger,Maximilian A.; Schilling,Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.
  28. Hillman,Joseph, Method of inhibiting copper corrosion during supercritical COcleaning.
  29. Toma,Dorel Ioan; Schilling,Paul, Method of passivating of low dielectric materials in wafer processing.
  30. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
  31. Schilling,Paul, Method of treating a composite spin-on glass/anti-reflective material prior to cleaning.
  32. Schilling,Paul, Method of treatment of porous dielectric films to reduce damage during cleaning.
  33. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.
  34. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.
  35. Wuester,Christopher D., Process flow thermocouple.
  36. Jur, Jesse Stephen; McCullough, Kenneth J.; Moreau, Wayne Martin; Simons, John Patrick; Taft, Charles Jesse, Process for cleaning a workpiece using supercritical carbon dioxide.
  37. Cash Alan B., Process for regenerating spent solvent.
  38. Passer Bernd (Burghausen DEX) Wengbauer Rudolf (Mehring DEX) Pichlmeier Ludwig (Reut DEX), Process for treating disk-shaped workpieces with a liquid.
  39. Mullee,William H.; de Leeuwe,Marc; Roberson, Jr.,Glenn A.; Palmer,Bentley J., Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process.
  40. Mullee, William H.; de Leeuwe, Marc; Roberson, Jr., Glenn A., Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process.
  41. Mullee William H. ; de Leeuwe Marc ; Roberson ; Jr. Glenn A., Removal of CMP residue from semiconductors using supercritical carbon dioxide process.
  42. Bertram, Ronald Thomas; Scott, Douglas Michael, Removal of contaminants from a fluid.
  43. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
  44. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
  45. William H. Mullee ; Maximilian A. Biberger ; Paul E. Schilling, Removal of photoresist and residue from substrate using supercritical carbon dioxide process.
  46. Koch Robert, Removal of polishing residue from substrate using supercritical fluid process.
  47. Mullee William H., Removal of resist or residue from semiconductors using supercritical carbon dioxide.
  48. Yamamoto Soichiro,CAX ITX L6C 1BZ ; Pepin Jean-Pierre,CAX ITX G6P 6T5, Solvent recycling system.
  49. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
  50. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
  51. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
  52. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.
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