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A switching system for controlling rf energy through an rf transmission medium including a plurality of semiconductor switching devices connected in a series configuration with the primary electrodes connected in series, and means for providing graduated bias on the control electrodes for establishi

A switching system for controlling rf energy through an rf transmission medium including a plurality of semiconductor switching devices connected in a series configuration with the primary electrodes connected in series, and means for providing graduated bias on the control electrodes for establishing an equal control voltage on each device between its control electrode and one of its primary electrodes.

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A switching system for controlling rf energy through an rf transmission medium, comprising: a plurality of semiconductor switching devices connected in a series configuration with the primary electrodes connected in series; means for providing a graduated bias on the control electrodes of said devic

A switching system for controlling rf energy through an rf transmission medium, comprising: a plurality of semiconductor switching devices connected in a series configuration with the primary electrodes connected in series; means for providing a graduated bias on the control electrodes of said devices to establish an equal control voltage on each device between its control electrode and one of its primary electrodes for increasing the voltage capacity of said switching system and the power capacity of said rf transmission medium; said means for providing a graduated bias including a voltage divider network connected across the control electrodes of said semiconductor devices; and said voltage divider network including a plurality of series-connected inductors.