초록 ▼

A film forming method comprises the steps of placing a plurality of objects to be processed and supplying an etching gas in a reaction container, removing a natural oxidization originated film on an object to be processed placed in the reaction container under a heating condition by plasma etching,

A film forming method comprises the steps of placing a plurality of objects to be processed and supplying an etching gas in a reaction container, removing a natural oxidization originated film on an object to be processed placed in the reaction container under a heating condition by plasma etching, exhausting the etching gas after stopping supply of the etching gas so as to stop making of the plasma, and supplying a film forming gas in the reaction container without rendering the reaction container open to air so as to form a film on the objects.

대표청구항 ▼

A film forming method comprising the steps of: placing a plurality of objects to be processed in a reaction container; supplying an etching gas in said reaction container; making said etching gas into a plasma; removing a natural oxidization originated film on said objects to be processed under a he

A film forming method comprising the steps of: placing a plurality of objects to be processed in a reaction container; supplying an etching gas in said reaction container; making said etching gas into a plasma; removing a natural oxidization originated film on said objects to be processed under a heating condition by said plasma; exhausting said etching gas after stopping supply of said etching gas so as to stop making of said plasma; and supplying a film forming gas in said reaction container without rendering said reaction container open to air so as to form a film on said objects.