초록 ▼

To form a metal layer on a semiconductor wafer, a first portion of a first tungsten/titanium layer is formed by sputtering tungsten/titanium onto the semiconductor wafer in a first evacuated sputter station. A second portion of the first tungsten/titanium layer is then sputtered on in a second evacu

To form a metal layer on a semiconductor wafer, a first portion of a first tungsten/titanium layer is formed by sputtering tungsten/titanium onto the semiconductor wafer in a first evacuated sputter station. A second portion of the first tungsten/titanium layer is then sputtered on in a second evacuated sputter station. Then the tungsten/titanium layer is exposed to air before forming an aluminum layer on top of the tungsten/titanium layer. Finally, a second tungsten/titanium layer is deposited on the aluminum layer. By forming the first tungsten/titanium layer in two steps two sequential sputter stations, the amount of tungsten/titanium deposited onto each sputter station\s hardware and shielding is reduced during the processing of each semiconductor wafer, thereby increasing the number of wafers which can be processed by the sputter stations before the tungsten/titanium deposited on the sputter stations\hardware and shielding needs to be removed. The step of exposing the first tungsten/titanium layer to air causes at least partial oxidation of the titanium in the first tungsten/titanium layer and thereby decreases the resistivity of the entire metal sandwich. Exposure of the first tungsten/titanium layer to air also increases the performance of this layer as a diffusion barrier－i.e., as a barrier to diffusion of aluminum into the substrate.

대표청구항 ▼

A method of forming a metal layer on a semiconductor wafer, the steps of the method comprising, in sequence: forming a tungsten/titanium layer on a semiconductor wafer by sputtering tungsten/titanium onto said semiconductor wafer in an evacuated chamber; exposing said tungsten/titanium layer to air;

A method of forming a metal layer on a semiconductor wafer, the steps of the method comprising, in sequence: forming a tungsten/titanium layer on a semiconductor wafer by sputtering tungsten/titanium onto said semiconductor wafer in an evacuated chamber; exposing said tungsten/titanium layer to air; and then, forming an aluminum layer over said tungsten/titanium layer on said semiconductor wafer; whereby said step of exposing said tungsten/titanium layer causes at least partial oxidation of the titanium in said tungsten/titanium layer. A system for forming a metal layer on a semiconductor wafer, comprising: a first evacuated sputter station which deposits a first portion of a first tungsten/titanium layer on a semiconductor wafer; a second evacuated sputter station which receives said semiconductor wafer from said first evacuated sputter station and which deposits a second portion of said first tungsten/titanium layer on top of said first portion of said tungsten/titanium layer; a third evacuated sputter station which receives said semiconductor wafer after processing of said semiconductor wafer in said second evacuated sputter station and which deposits an aluminum layer over said first tungsten/titanium layer on said semiconductor wafer; a fourth evacuated sputter station which receives said semiconductor wafer after processing of said semiconductor wafer in said third evacuated sputter station and which deposits a second tungsten/titanium layer over said aluminum layer; said first tungsten/titanium, aluminum and second tungsten/titanium layers together comprising a metal layer on said semiconductor wafer; said first and second sputter stations forming a tungsten/titanium layer inside said first and second sputter stations which increases in thickness with the processing of each said semiconductor wafer; and whereby said system forms said first tungsten/titanium layer for each semiconductor wafer in two steps in two sequential sputter stations, which reduces the amount of tungsten/titanium deposited inside each said sputter station during the processing of each semiconductor wafer, thereby increasing the number of wafers which can be processed by said sputter stations before said tungsten/titanium deposited inside said first and second sputter stations exceeds a prefefined threshold thickness, at which time said system needs to be shut down so as to remove tungsten/titanium deposited inside said first and second sputter stations.