초록 ▼

Preferred embodiments include a monolithic uncooled infrared detector array of bolometers fabricated over a silicon substrate (142); the bolometers include a stack (144) of oxide (146) TiN (148), a-Si:H (150), TiN (152), oxide (154) with the TiN forming the infrared absorbers and resistor contacts a

Preferred embodiments include a monolithic uncooled infrared detector array of bolometers fabricated over a silicon substrate (142); the bolometers include a stack (144) of oxide (146) TiN (148), a-Si:H (150), TiN (152), oxide (154) with the TiN forming the infrared absorbers and resistor contacts and the a-Si:H the resistor with a high temperature coefficient of resistivity. The resistor is suspended over the silicon substrate (142) by metal interconnects (154 and 156) and related processing circuitry is formed in the silicon substrate (142) beneath the resistor.

대표청구항 ▼

An array of bolometers for detecting radiation in a spectral range, comprising: (a) a substrate including an array of bolometer circuit elements adjacent a first surface; (b) an array of resistors, each of said resistors having leads and spaced from said surface by about one quarter wavelength of th

An array of bolometers for detecting radiation in a spectral range, comprising: (a) a substrate including an array of bolometer circuit elements adjacent a first surface; (b) an array of resistors, each of said resistors having leads and spaced from said surface by about one quarter wavelength of the center of said spectral range, said resistor plus leads being formed from a stack including a first conductive layer, a resistive layer, and a second conductive layer with said second conductive layer the closest layer to said surface, each of said resistors further oriented to receive radiation, and located over and electrically connected to a corresponding set of said circuit elements.