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Method for removing a film on a silicon layer surface

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B44C-001/22
  • C03C-015/00
  • C03C-025/06
출원번호 US-0557550 (1990-07-24)
우선권정보 JP-0195764 (1989-07-26); JP-0267777 (1989-10-14); JP-0267778 (1989-10-14)
발명자 / 주소
  • Izumi Akira (Kyoto JPX) Toei Keiji (Kyoto JPX) Watanabe Nobuatsu (Kyoto JPX) Chong Yong-Bo (Kyoto JPX)
출원인 / 주소
  • Dainippon Screen Mfg. Co., Ltd. (Kyoto JPX 03)
인용정보 피인용 횟수 : 54  인용 특허 : 5

초록

A method for removing a film on a silicon layer formed on a surface of a substrate includes the steps of: (a) placing a substrate in a reaction chamber to be isolated hermetically from the outside air, and (b) feeding anhydrous hydrogen fluoride and alcohol simultaneously into the reaction chamber.

대표청구항

A method for removing a film on a silicon layer formed on a surface of a substrate, comprising the steps of: (a) placing said substrate in a reaction chamber to be isolated in an airtight manner from the outside air, and (b) feeding anhydrous hydrogen fluoride and alcohol simultaneously into said re

이 특허에 인용된 특허 (5)

  1. Kozicki Michael N. (Tempe AZ), Carbon enhanced vapor etching.
  2. Beyer Klaus D. (Poughkeepsie NY) Kastl Robert H. (Wappingers Falls NY), Cleaning process for p-type silicon surface.
  3. Blackwood Robert S. (Lubbock TX) Biggerstaff Rex L. (Lubbock TX) Clements L. Davis (Lincoln NE) Cleavelin C. Rinn (Lubbock TX), Gaseous process and apparatus for removing films from substrates.
  4. Fukuda Hisashi (Tokyo JPX), Method and device for cleaning substrates.
  5. Maeda Nobuhisa (Yamatotakada JPX) Suzuki Takashi (Toyonaka JPX) Yamamoto Shigeyuki (Nara JPX), Treatment method for plate-shaped substrate.

이 특허를 인용한 특허 (54)

  1. Rose Peter H. ; Sferlazzo Piero ; van der Heide Robert G., Aerosol surface processing.
  2. Rose Peter H. ; Sferlazzo Piero ; van der Heide Robert G., Aerosol surface processing.
  3. Butterbaugh Jeffery W. ; Gray David C., Cleaning method.
  4. Butterbaugh Jeffery W. ; Gray David C. ; Fayfield Robert T., Cleaning method.
  5. Grant, Robert W.; Ruzyllo, Jerzy; Torek, Kevin, Controlled etching of oxides via gas phase reactions.
  6. Pas Michael F. ; Park Jin-goo,KRX, De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue.
  7. Fayfield Robert T. ; Heitxinger John M., Direct vapor delivery of enabling chemical for enhanced HF etch process performance.
  8. Fayfield Robert T. ; Heitzinger John M., Direct vapor delivery of enabling chemical for enhanced HF etch process performance.
  9. Nishimura, Eiichi; Shimizu, Yusuke, Dry etching method for silicon nitride film.
  10. Fayfield, Robert T.; Schwab, Brent, Equipment for UV wafer heating and photochemistry.
  11. Chinn, Jeffrey D.; Soukane, Sofiane, Etch process for etching microstructures.
  12. Xu, Jingjing; Wang, Fei; Wang, Anchuan; Ingle, Nitin K.; Visser, Robert Jan, Gas-phase silicon nitride selective etch.
  13. Watanabe Hirohito (Tokyo JPX) Kyogoku Mitsusuke (Tokyo JPX), HF vapor selective etching method and apparatus.
  14. Carter Lawrence E. ; Schwab Brent ; Fayfield Robert T., HF/IPA based process for removing undesired oxides form a substrate.
  15. Kikuchi Jun (Kawasaki JPX), Hydrogen radical processing.
  16. Tuda Mutumi,JPX ; Ono Kouichi,JPX ; Tsuchihashi Masaaki,JPX ; Hanazaki Minoru,JPX ; Komemura Toshio,JPX ; Oku Kouji,JPX ; Nakaguma Shinji,JPX, Magnetically enhanced microwave plasma generating apparatus.
  17. Yael Nemirovsky IL; Sara Stolyarova IL; Benjamin Brosilow IL, Method and apparatus for removing native oxide layers from silicon wafers.
  18. Butterbaugh Jeffery W. ; Gray David C. ; Fayfield Robert T. ; Siefering Kevin ; Heitzinger John ; Hiatt Fred C., Method and apparatus for surface conditioning.
  19. Sprey, Hessel; Storm, Arjen Benjamin; Maes, Jan Willem Hubert, Method and installation for etching a substrate.
  20. Yasushi Sasaki JP, Method for drying a semiconductor wafer, a mixture for drying, and a dryer.
  21. Takahashi, Masashi; Nagata, Toshio; Tsurugida, Yoshirou; Ohsako, Takashi; Mori, Hirotaka; Ohara, Akihiko; Uchida, Hidetsugu; Uchida, Hiroaki; Yoshida, Katsuji; Takahashi, Masahiro, Method for forming insulating film and for manufacturing integrated circuit.
  22. Hey H. Peter W ; Carlson David, Method for in-situ cleaning of native oxide from silicon surfaces.
  23. Feijoo, Diego; Schwab, Guenter; Buschhardt, Thomas, Method for producing a layer structure.
  24. Chen,Xiaoyi; Ying,Chentsau; Nallan,Padmapani C.; Kumar,Ajay; Kerns,Ralph C.; Rui,Ying; Yan,Chun; Ding,Guowen; Yau,Wai Fan, Method for removal of metallic residue after plasma etching of a metal layer.
  25. Torek Kevin James ; Lee Whonchee ; Bedge Satish, Method for selective etching of anitreflective coatings.
  26. Verhaverbeke Steven ; Heyns Mark,BEX ; Hendriks Menso,NLX ; de Blank Rene,BEX, Method for semiconductor processing using mixtures of HF and carboxylic acid.
  27. Scheiter Thomas (Munich DEX) Naeher Ulrich (Munich DEX) Hierold Christofer (Munich DEX), Method for the selective removal of silicon dioxide.
  28. Habuka Hitoshi,JPX ; Otsuka Toru,JPX, Method for treating a surface of a silicon single crystal and a method for manufacturing a silicon single crystal thin film.
  29. Kozasa, Kazuaki; Kawasaki, Tomonori; Sugiman, Takahisa; Nishimura, Hironori, Method of cleaning semiconductor wafer and semiconductor wafer.
  30. Torek Kevin J., Method of etching thermally grown oxide substantially selectively relative to deposited oxide.
  31. Torek Kevin J., Method of etching thermally grown oxide substantially selectively relative to deposited oxide.
  32. Randhir P. Thakur, Method of forming a semiconductor device.
  33. Thakur,Randhir P., Method of forming a semiconductor device.
  34. Shimizu Akira,JPX ; Namba Kunitoshi,JPX, Method of processing semiconductor substrate.
  35. Gschwandtner, Alexander; Innertsberger, Gudrun; Grassl, Andreas; Froschle, Barbara; Kerber, Martin; Mattheus, Alexander, Method of producing a semiconductor surface covered with fluorine.
  36. Thakur, Randhir P., Method of providing an oxide.
  37. Jeffery W. Butterbaugh ; Brent Schwab, Method of surface preparation.
  38. Torek Kevin James (Boise ID) Lee Whonchee (Boise ID) Hawthorne ; deceased Richard C. (late of Nampa ID), Methods and etchants for etching oxides of silicon with low selectivity in a vapor phase system.
  39. Arkadii V. Samoilov ; Dale R. DuBois ; Bradley M. Curelop ; David R. Carlson ; Paul B. Comita, Process and apparatus for cleaning a silicon surface.
  40. Butterbaugh Jeffery W. ; Gray David C., Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds.
  41. Rose Peter H. ; Sferlazzo Piero, Processing a surface.
  42. Christenson,Kurt K.; Nelson,Steven L.; Oikari,James R.; Olson,Jeff F.; Wu,Biao, Rinsing processes and equipment.
  43. Torek Kevin James ; Lee Whonchee ; Hawthorne Richard C., Selective etching of oxides.
  44. Flietner, Bertrand; Bergner, Wolfgang, Self aligned buried plate.
  45. Walter Richardson Merry, Semiconductor fabrication process.
  46. Bergman Eric J. ; Berner Robert W. ; Oberlitner David, Semiconductor processing using vapor mixtures.
  47. Pagliaro, Jr., Robert H., Silicon surface preparation.
  48. Pagliaro, Jr.,Robert H., Silicon surface preparation.
  49. Pagliaro, Jr., Robert H.; Doty, Mitchell L.; King, Diane M., Stable, oxide-free silicon surface preparation.
  50. Nuttall Michael ; Torek Kevin J. ; Chapek David L., Trench isolation method.
  51. Fayfield Robert T. ; Schwab Brent D., UV/halogen treatment for dry oxide etching.
  52. Butterbaugh Jeffery W. ; Sawin Herbert H. ; Zhang Zhe ; Han Yong-Pil, Vapor phase cleaning of alkali and alkaline earth metals.
  53. Watanabe Hirohito,JPX ; Kyogoku Mitsusuke,JPX, Vapor selective etching method and apparatus.
  54. Jones, Oliver David; McMahon, Kenneth C.; Borkowski, Jonathan E.; Petersen, Scott; Stephens, Donald E.; Mehmandoust, Yassin; Olivas, James M., Wafer drying apparatus and method.
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