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Quantum-well radiation-interactive device, and methods of radiation detection and modulation 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/14
출원번호 US-0361879 (1989-06-06)
발명자 / 주소
  • Bethea Clyde G. (943 Hillside Ave. Plainfield NJ 07062) Hasnain Ghulam (14 Daphne Ct. Edison NJ 08820) Levine Barry F. (22 Bear Brook La. Livingston NJ 07039) Malik Roger J. (23 Ridgedale Ave. Summit
인용정보 피인용 횟수 : 27  인용 특허 : 7

초록

Electromagnetic radiation such as, in particular, infrared radiation is detected opto-electronically by means of a superlattice structure forming quantum wells having a single bound state; in the interest of minimizing dark-current, relatively wide barriers are used between quantum wells. Resulting

대표청구항

A device responsive to electromagnetic radiation at a wavelength of interest comprising a substrate-supported semiconductor superlattice between contact layers, said superlattice comprising interleaved quantum-well and barrier layers, quantum wells formed by said layers respectively having a thickne

이 특허에 인용된 특허 (7)

  1. Osbourn Gordon C. (Albuquerque NM), Electro-optical SLS devices for operating at new wavelength ranges.
  2. Hattori Shuzo (Nagoya JA) Hiramatsu Tadao (Nagoya JA), Electrooptic thin-film modulator.
  3. Bethea Clyde G. (Plainfield NJ) Choi Kwong-Kit (North Plainfield NJ) Levine Barry F. (Livingston NJ) Malik Roger J. (Summit NJ) Walker John F. (Westfield NJ), Infrared-radiation detector device.
  4. Parker Sidney G. (Dallas TX) York Rudy L. (Plano TX), Mosaic pattern of infrared detectors of different cut off wave lengths.
  5. Chin Raymond (Thousand Oaks CA), Multiple-quantum-layer photodetector.
  6. Arya Rajeewa R. (Doylestown PA), Superlattice doped layers for amorphous silicon photovoltaic cells.
  7. Cheng Li-Jen (LaCrescenta CA), Tailorable infrared sensing device with strain layer superlattice structure.

이 특허를 인용한 특허 (27)

  1. Gunapala, Sarath D.; Choi, Kwong Kit; Bandara, Sumith V., Dual band QWIP focal plane array.
  2. Bandara Sumith V. ; Gunapala Sarath D. ; Liu John K., Dual-band quantum-well infrared sensing array having commonly biased contact layers.
  3. Peter, Matthias; Meyer, Tobias; Off, Jürgen; Taki, Tetsuya; Hertkorn, Joachim; Sabathil, Matthias; Laubsch, Ansgar; Biebersdorf, Andreas, Electrically pumped optoelectronic semiconductor chip.
  4. Fan Yongping, Graded compositions of II-VI semiconductors and devices utilizing same.
  5. Gunapala Sarath ; Liu John K. ; Park Jin S. ; Lin True-Lon ; Sundaram Mani, Infrared radiation-detecting device.
  6. Gunapala, Sarath; Liu, John K.; Park, Jin S.; Lin, True-Lon; Sundaram, Mani, Infrared radiation-detecting device.
  7. Falk R. Aaron (Renton WA), Integrated trigger injector for avalanche semiconductor switch devices.
  8. Buchanan, Margaret; Byloos, Martin; Chiu, Shen; Dupont, Emmanuel; Gao, Mae; Liu, Hui Chun; Song, Chun-ying, Method for micro-fabricating a pixelless infrared imaging device.
  9. Goossen Keith Wayne (Aberdeen NJ), Method of making integrated detector/photoemitter with non-imaging director.
  10. Gunapala, Sarath D.; Bandara, Sumith V.; Liu, John K.; Rafol, Sir B.; Ting, David Z.; Mumolo, Jason M., Multi-quantum-well detector for low-background applications.
  11. Hironori Nishino JP; Yusuke Matsukura JP; Hitoshi Tanaka JP; Mitsunori Yokoyama JP, Optical semiconductor device and method for fabricating the same.
  12. Prafulla Masalkar JP; Hiroji Ebe JP, Photodetecting device.
  13. Sugawa Shigetoshi,JPX ; Gofuku Ihachiro,JPX ; Ohmi Kazuaki,JPX ; Osada Yoshiyuki,JPX ; Yamanobe Masato,JPX, Photoelectric conversion apparatus.
  14. Kyono, Takashi; Akita, Katsushi; Shibata, Kaoru; Nishizuka, Koji; Fujii, Kei, Semiconductor device.
  15. Bowers John E. ; Hawkins Aaron R., Semiconductor hetero-interface photodetector.
  16. Bowers John E. ; Hawkins Aaron R., Semiconductor hetero-interface photodetector.
  17. Bowers John E. ; Hawkins Aaron R., Semiconductor hetero-interface photodetector.
  18. John E. Bowers ; Aaron R. Hawkins, Semiconductor hetero-interface photodetector.
  19. Schneider Harald,DEX ; Schoenbein Clemens,DEX, Semiconductor heterostructure radiation detector having two spectral sensitivity ranges.
  20. Sugawara, Hideto; Watanabe, Yukio; Abe, Hirohisa; Konno, Kuniaki, Semiconductor light emitting element with improved light extraction efficiency.
  21. Pezzani Robert,FRX, Serial arrangement of photothyristors.
  22. Kim, Jin K.; Carroll, Malcolm S.; Gin, Aaron; Marsh, Phillip F.; Young, Erik W.; Cich, Michael J., Strained layer superlattice focal plane array having a planar structure.
  23. Benson, Robert G.; Scanlon, Thomas J.; Czerepuszko, Paul A., Thermography camera configured for leak detection.
  24. Benson, Robert G.; Scanlon, Thomas J.; Czerepuszko, Paul A., Thermography camera tuned to detect absorption of infrared radiation in a selected spectral bandwidth.
  25. Benson, Robert G.; Scanlon, Thomas J.; Czerepuszko, Paul A., Thermography camera tuned to detect absorption of infrared radiation in a selected spectral bandwidth.
  26. Benson, Robert G.; Scanlon, Thomas J.; Czerepuszko, Paul A., Thermography camera tuned to detect absorption of infrared radiation in a selected spectral bandwidth.
  27. Robert J. Martin, Three color quantum well focal plane arrays.
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