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Blue light emitting diode formed in silicon carbide

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • N01L-029/161
  • N01L-029/205
  • N01L-029/225
출원번호 US-0399301 (1989-08-28)
발명자 / 주소
  • Edmond John A. (Apex NC)
출원인 / 주소
  • Cree Research, Inc. (Durham NC 02)
인용정보 피인용 횟수 : 310  인용 특허 : 5

초록

The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 465-470 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comprises a substrate of alpha silicon carbide ha

대표청구항

A light emitting diode formed in silicon carbide that emits light in the blue to violet portion of the visible spectrum and comprising: a p-type substrate of alpha silicon carbide having a flat interface surface that is inclined more than one degree off axis with respect to a basal plane thereof sub

이 특허에 인용된 특허 (5)

  1. Weyrich Claus (Gauting DEX) Ziegler Guenther (Erlangen DEX) Hoffmann Ludwig (Munich DEX) Theis Dietmar (Munich DEX), Light emitting diode having silicon carbide layers.
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  4. Babenko Vladimir Alexandrovich (ULITSA Sadovo-Karetnaya ; 8 ; kv. 60 Moscow SU) Boeva Galina Georgievna (Zavodskoi proezd ; 20 ; kv. 102 Moscow SU) Violin Eduard Efimovich (PROSPEXT Nauki ; 16 ; korp, Semiconductor indicating device and method for production of same.
  5. Pavlichenko Vadim Ivanovich (ULITSA Polevaya 20/1 Kalingrad ; Moskovskaya oblast SU), Semiconductor light source on the basis of silicon carbide single crystal.

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