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A method and apparatus for detecting a planar endpoint on a semiconductor wafer during chemical/mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change of friction may be produced when, for instance

A method and apparatus for detecting a planar endpoint on a semiconductor wafer during chemical/mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change of friction may be produced when, for instance, an oxide coating of the wafer is removed and a harder material is contracted by the polishing surface. In a preferred form of the invention, the change in friction is detected by rotating the wafer and polishing surface with electric motors and measuring current changes on one or both of the motors. This current change can then be used to produce a signal to operate control means for adjusting or stopping the process.

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1. A method for mechanically planarizing a semiconductor wafer comprising: a. holding the wafer in contact with a polishing platen in the presence of a chemical slurry; b. rotating the wafer with respect to and against the polishing platen; and c. sensing a change in friction between the wafer

1. A method for mechanically planarizing a semiconductor wafer comprising: a. holding the wafer in contact with a polishing platen in the presence of a chemical slurry; b. rotating the wafer with respect to and against the polishing platen; and c. sensing a change in friction between the wafer and the polishing platen to detect a planar endpoint on the wafer. 2. The process as claimed in claim 1 and further comprising: d. rotating the wafer or the polishing platen with an electric drive motor; and e. sensing a change in friction with a current meter for the drive motor which detects a change in amperage through the drive motor. 3. The process as claimed in claim 2 and wherein: sensing the planar endpoint occurs when an oxide coating on the wafer is planarized and a surface of the wafer including a different material is contacted by the polishing platen. 4. The process as claimed in claim 2 and wherein: the current meter measures a current flow to the drive motor which is equated to the torque output and to the current draw of the motor multiplied by a multiplying factor. 5. The process as claimed in claim 4 and wherein: torque (T) on the motor is equated to the force (F) between the wafer and polishing platen and to the radius (r) of the wafer from the center of the polishing platen by the formula: T=F×r. 6. A method of detecting a planar endpoint on a semiconductor wafer during a mechanical planarization process comprising: a. rotating the wafer with respect to a polishing platen; and b. sensing a change in friction between the wafer and polishing platen to detect a planar endpoint on the wafer. 7. A method as recited in claim 6 and wherein: c. the wafer is rotated with respect to the polishing platen by an electric motor; and d. sensing a change in friction is accomplished by a current meter for the motor. 8. The method as recited in claim 7 and wherein: the planar endpoint occurs when coating on the wafer is removed to expose a surface formed with a different material. 9. The method as recited in claim 8 and wherein: both the wafer and polishing platen are rotated. 10. The method as recited in claim 9 and wherein: both the wafer and polishing platen are rotated. 11. The method as recited in claim 7 and wherein: the coefficient of friction between the wafer and polishing platen is equated to the torque (T) on the motor by the equation T=F×r, where "F" is a function of the coefficient of friction and "r" is a radius from the center of the polishing platen to the center of the wafer.