초록 ▼

A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less.

A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less. In the case where such silicon granules are used, a bursting phenomenon does not occur when the silicon granules are melted. As a result, there is no scattered matter due to the bursting phenomenon, whereby the growth condition of the single crystal is not disturbed.

대표청구항 ▼

A method for producing silicon single crystal using silicon granules, comprising: preparing powdered silicon; growing silicon granules by decomposing silane gas on the surface of said powdered silicon; heating said silicon granules in an atmosphere of an inert gas so as to have a residual hydrogen c

A method for producing silicon single crystal using silicon granules, comprising: preparing powdered silicon; growing silicon granules by decomposing silane gas on the surface of said powdered silicon; heating said silicon granules in an atmosphere of an inert gas so as to have a residual hydrogen concentration of 7.5 wtppm or less; and growing silicon single crystal by pulling a silicon seed crystal from a melt of liquid silicon prepared by melting said silicon granules.