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Method for making moisture insensitive zinc sulfide based luminescent materials 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05D-005/12
  • B05D-007/00
  • C23C-016/00
  • C23C-016/44
출원번호 US-0593451 (1990-10-05)
발명자 / 주소
  • Klinedinst Keith A. (Marlboro MA) Gary Richard A. (Everett MA) Lichtensteiger Silvia E. (Acton MA)
출원인 / 주소
  • GTE Laboratories Incorporated (Waltham MA 02)
인용정보 피인용 횟수 : 75  인용 특허 : 0

초록

A process is disclosed for coating phosphors with hydrolyzed alkylaluminum. The hydrolyzed alkylaluminum coating renders the phosphors insensitive to atmospheric moisture. the coating process involves vaporizing an aluminum-containing precursor such as trimethylaluminum or triethylaluminum in an ine

대표청구항

A method for forming a continuous coating on particles of a finely divided material comprising: a) vaporizing an aluminum-containing material selected from the group consisting of trimethylaluminum and triethylaluminum in an inert carrier gas to form a gas containing a vaporized aluminum-containing

이 특허를 인용한 특허 (75)

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  2. Derderian, Garo J.; Sandhu, Gurtej Singh, Atomic layer deposition and conversion.
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  4. Ahn,Kie Y.; Forbes,Leonard, Atomic layer-deposited LaAlO3 films for gate dielectrics.
  5. Fan Chen-Wen ; Benjamin Dale E. ; Kummer Franz,DEX ; Chenot Charles F. ; Gingerich Richard G. W., Boron oxide coated phosphor and method of making same.
  6. Lunk, Hans-Joachim; Morgan, Ricky D.; Stevens, Henry J.; Benjamin, Dale E.; Dang, Tuan A.; Frisk, Timothy A., Ceramic-coated tungsten powder.
  7. Ahn, Kie Y.; Forbes, Leonard, Conductive layers for hafnium silicon oxynitride.
  8. Ahn, Kie Y.; Forbes, Leonard, Conductive layers for hafnium silicon oxynitride films.
  9. Ahn, Kie Y.; Forbes, Leonard, Conductive layers for hafnium silicon oxynitride films.
  10. Ahn,Kie Y.; Forbes,Leonard, Crystalline or amorphous medium-K gate oxides, Y0and Gd0.
  11. Sandhu, Gurtej S.; Durcan, D. Mark, Devices with nanocrystals and methods of formation.
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  13. Budd Kenton D., Electroluminescent phosphor particles encapsulated with an aluminum oxide based multiple oxide coating.
  14. Hampden-Smith Mark J. ; Kodas Toivo T. ; Caruso James ; Skamser Daniel J. ; Powell Quint H. ; Kunze Klaus, Electroluminescent phosphor powders, methods for making phosphor powders and devices incorporating same.
  15. Ahn,Kie Y.; Forbes,Leonard, Electronic apparatus with deposited dielectric layers.
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  17. Budd Kenton D. (St. Paul MN), Encapsulated electroluminescent phosphor and method for making same.
  18. Fan, Chen-Wen; Reilly, Kenneth T.; Gingerich, Richard G. W.; Benjamin, Dale E., Encapsulated long life electroluminescent phosphor.
  19. Meng, Shuang; Derderian, Garo J.; Sandhu, Gurtej Singh, Enhanced atomic layer deposition.
  20. Meng, Shuang; Derderian, Garo J.; Sandhu, Gurtej Singh, Enhanced atomic layer deposition.
  21. Meng,Shuang; Derderian,Garo J.; Sandhu,Gurtej Singh, Enhanced atomic layer deposition.
  22. Ahn, Kie Y.; Forbes, Leonard, Evaporation of Y-Si-O films for medium-K dielectrics.
  23. Ahn, Kie Y.; Forbes, Leonard, Evaporation of Y-Si-O films for medium-k dielectrics.
  24. Ahn, Kie Y.; Forbes, Leonard, Gate oxides, and methods of forming.
  25. Burnell-Jones, Peter, Heat curable thermosetting luminescent resins.
  26. Ahn, Kie Y.; Forbes, Leonard, HfAlOfilms for gate dielectrics.
  27. Ahn, Kie Y.; Forbes, Leonard, High-K gate dielectric oxide.
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  34. Stephen R. Forrest ; Paul E. Burrows ; Vladimir S. Ban, Low pressure vapor phase deposition of organic thin films.
  35. Ahn, Kie Y.; Forbes, Leonard, Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics.
  36. Ahn, Kie Y.; Forbes, Leonard, Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics.
  37. Ahn,Kie Y.; Forbes,Leonard, Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics.
  38. Ahn, Kie Y.; Forbes, Leonard, Low-temperature grown high quality ultra-thin CoTiOgate dielectrics.
  39. Burnell-Jones Peter,AUX, Luminescent gel coats and moldable resins.
  40. Forbes, Leonard; Ahn, Kie Y., Memory utilizing oxide nanolaminates.
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  42. Forbes, Leonard; Ahn, Kie Y., Memory utilizing oxide-conductor nanolaminates.
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  46. Tian, Yongchi, Method of coating micrometer sized inorganic particles.
  47. Tian, Yongchi, Method of coating micrometer sized inorganic particles.
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  50. Ahn,Kie Y.; Forbes,Leonard, Methods for atomic-layer deposition of aluminum oxides in integrated circuits.
  51. Ahn, Kie Y., Methods, systems, and apparatus for uniform chemical-vapor depositions.
  52. Ahn,Kie Y., Methods, systems, and apparatus for uniform chemical-vapor depositions.
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  64. Hampden-Smith Mark J. ; Kodas Toivo T. ; Caruso James ; Skamser Daniel J. ; Powell Quint H. ; Kunze Klaus, Sulfur-containing phosphor powders, methods for making phosphor powders and devices incorporating same.
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  68. Meng, Shuang; Derderian, Garo J.; Sandhu, Gurtej S., Transistor with reduced depletion field width.
  69. Meng, Shuang; Derderian, Garo J.; Sandhu, Gurtej S., Transistor with reduced depletion field width.
  70. Forbes, Leonard; Cloud, Eugene H.; Ahn, Kie Y., Transmission lines for CMOS integrated circuits.
  71. Forbes, Leonard, Write once read only memory employing charge trapping in insulators.
  72. Forbes, Leonard, Write once read only memory employing charge trapping in insulators.
  73. Forbes,Leonard, Write once read only memory employing floating gates.
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  75. Forbes,Leonard, Write once read only memory employing floating gates.
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