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In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01R-027/26
출원번호 US-0517106 (1990-05-01)
발명자 / 주소
  • Miller Gabriel L. (Westfield NJ) Wagner Eric R. (South Plainfield NJ)
출원인 / 주소
  • AT&T Bell Laboratories (Murray Hill NJ 02)
인용정보 피인용 횟수 : 165  인용 특허 : 0

초록 ▼

This invention provides an in situ monitoring technique and apparatus for chemical/mechanical planarization end point detection in the process of fabricating semiconductor or optical devices. Fabrication of semiconductor or optical devices often requires smooth planar surfaces, either on the surface

대표청구항 ▼

A process for in situ monitoring the thickness of a dielectric material on a lateral surface of an electrically conductive substrate having less than about one megohm-cm resistivity, which comprises placing the substrate so that a surface of an electrode structure faces the dielectric material, said

이 특허를 인용한 특허 (165)

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