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Plasma density controller for semiconductor device processing equipment 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0571799 (1990-08-23)
발명자 / 주소
  • Moslehi Mehrdad M. (Dallas TX)
출원인 / 주소
  • Texas Instruments Incorporated (Dallas TX 02)
인용정보 피인용 횟수 : 54  인용 특허 : 0

초록

A semiconductor fabrication plasma property controller (100) for controlling physical properties of a fabrication process plasma medium (144) under the influence of electromagnetic gas discharge energy from a power source (38) comprises a control volume (130) disposed between the process plasma (144

대표청구항

A plasma density controller for semiconductor device processing equipment for controlling the amount of plasma activation for a process gas as a result of absorbing gas discharge energy from a gas discharge energy source, comprising: a jacket interposed between the gas discharge energy source and th

이 특허를 인용한 특허 (54)

  1. Bhatnagar Yashraj K., Apparatus and method for efficient and compact remote microwave plasma generation.
  2. Tanaka Tsutomu ; Kelkar Mukul ; Fairbairn Kevin ; Ponnekanti Hari ; Cheung David, Apparatus and methods for upgraded substrate processing system with microwave plasma source.
  3. Tanaka Tsutomu ; Kelkar Mukul ; Fairbairn Kevin ; Ponnekanti Hari ; Cheung David, Apparatus and methods for upgraded substrate processing system with microwave plasma source.
  4. Tsutomu Tanaka ; Mukul Kelkar ; Kevin Fairbairn ; Hari Ponnekanti ; David Cheung, Apparatus and methods for upgraded substrate processing system with microwave plasma source.
  5. David B. Noble ; Ravi Jallepally ; Nathan D'Astici ; Gary Miner ; Turgut Sahin ; Guangcai Xing ; Yashraj Bhatnagar, Apparatus for exposing a substrate to plasma radicals.
  6. Kao Chien-Teh ; Tsai Kenneth ; Pham Quyen ; Rose Ronald L. ; Augason Calvin R. ; Yudovsky Joseph, Apparatus for improved remote microwave plasma source for use with substrate processing systems.
  7. Takeuchi Koichiro,JPX ; Ueda Hirokazu,JPX ; Narai Akira,JPX, Chemical vapor deposition using inductively coupled plasma and system therefor.
  8. Raaijmakers, Ivo; Van Bilsen, Franciscus B., Cleaning of semiconductor processing chambers.
  9. Raaijmakers, Ivo; Van Bilsen, Franciscus B., Cleaning of semiconductor processing chambers.
  10. Kamarehi, Mohammad; Wang, Ing Yann Albert, Corrugated plasma trap arrangement for creating a highly efficient downstream microwave plasma system.
  11. Wartski Louis (Montrouge FRX) Aubert Jean (Saint-Remy-les-Chevreuse FRX), Device and method for forming a plasma by application of microwaves.
  12. Winters Toby J., Downstream plasma reactor system incorporating a plasma-resistant blocking member.
  13. Gorin Georges J., Downstream plasma using oxygen gas mixtures.
  14. Mohammad Kamarehi ; Gerald M. Cox, Downstream sapphire elbow joint for remote plasma generator.
  15. Moslehi, Mehrdad M.; Davis, Cecil J., Edge sealing structure for substrate in low-pressure processing environment.
  16. Verdeyen, Joseph T.; Johnson, Wayne L.; Sirkis, Murray D., Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma.
  17. Verdeyen, Joseph T.; Johnson, Wayne L.; Sirkis, Murray D., Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma.
  18. McGuire, Gary Elder, Electronic amplifier device.
  19. Huseinovic, Armin; Berry, Ivan L., Fluid distribution members and/or assemblies.
  20. Ettinger Gary C. ; Shang Quanyuan ; Law Kam S., High power microwave plasma applicator.
  21. Wang, Ing-Yann Albert; Kamarehi, Mohammad, Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber.
  22. Sandhu Gurtej S. ; Buley Todd W., Low-pressure chemical vapor deposition process for depositing high-density highly-conformal, titanium nitride films of.
  23. Zhu, Zhen-Dong; Li, Qun-Qing; Zhang, Li-Hui; Chen, Mo; Fan, Shou-Shan, Manufacturing method of grating.
  24. Iseda, Seiji, Method and apparatus for etching a structure in a plasma chamber.
  25. Powell, Gary, Method and device utilizing real-time gas sampling.
  26. McDonald, R. Mike, Method and system for operating a mass flow controller.
  27. Gevelber Michael A. ; Toledo-Quinones Manuel, Method for closed loop control of chemical vapor deposition process.
  28. Kao Chien-Teh ; Tsai Kenneth ; Pham Quyen ; Rose Ronald L. ; Augason Calvin R. ; Yudovsky Joseph, Method for improved remote microwave plasma source for use with substrate processing system.
  29. Eriguchi Koji,JPX, Method of monitoring deposit in chamber, method of plasma processing, method of dry-cleaning chamber, and semiconductor.
  30. M'Saad Hichem,FRX, Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications.
  31. Fong Gary ; Chang Fong ; Nguyen Long, Methods and apparatus for pre-stabilized plasma generation for microwave clean applications.
  32. Kamarehi, Mohammad; Wang, Ing Yann Albert, Methods and arrangement for implementing highly efficient plasma traps.
  33. Kamarehi, Mohammad; Wang, Ing-Yann Albert, Methods for implementing highly efficient plasma traps.
  34. Kamarehi Mohammad ; Cox Gerald M., Microwave choke for remote plasma generator.
  35. Tanaka Tsutomu ; Nowak Thomas ; Nguyen Chau ; Ponnekanti Hari ; Fairbairn Kevin, Microwave plasma generating apparatus with improved heat protection of sealing O-rings.
  36. Srivastava Aseem K. ; Pingree Richard E. ; Pellicier Victor, Plasma discharge device with dynamic tuning by a movable microwave trap.
  37. Yanagisawa Michihiko,JPX ; Iida Shinya,JPX, Plasma etching apparatus.
  38. Yorozuya, Shunichi, Plasma film forming apparatus.
  39. Reder,Steven E.; Pillow,Preston E., Reactor system.
  40. Roth, J. Reece, Remote exposure of workpieces using a plasma.
  41. J. Reece Roth, Remote exposure of workpieces using a recirculated plasma.
  42. Rajagopalan Ravi ; Liu Patricia M. ; Narwankar Pravin K. ; Tran Huyen ; Krishnaraj Padmanabhan ; Ablao Alan ; Casper Tim, Remote plasma cleaning method for processing chambers.
  43. Mohammad Kamarehi ; Gerald M. Cox, Remote plasma generator with sliding short tuner.
  44. Mohammad Kamarehi ; Gerald M. Cox, Remote plasma mixer.
  45. Huo David Datong, Restrictor shield having a variable effective throughout area.
  46. Turner Terry R. ; Belcher James F. ; Andrews Gary W., Retractable probe system with in situ fabrication environment process parameter sensing.
  47. Turner Terry R. ; Belcher James F. ; Andrews Gary W., Retractable probe system with in situ fabrication environment process parameter sensing.
  48. Sirkis, Murray D.; Verdeyen, Joseph T., Stabilized oscillator circuit for plasma density measurement.
  49. Sirkis, Murray D.; Verdeyen, Joseph T., Stabilized oscillator circuit for plasma density measurement.
  50. Shang Quanyuan ; Sun Sheng ; Law Kam S. ; Beer Emanuel, Surface-treated shower head for use in a substrate processing chamber.
  51. Mundt Randall S., Temperature mapping method.
  52. Linthorst, Eric J., Tunable ramp rate circuit for a mass flow controller.
  53. John V. Schmitt, Uniform heat trace and secondary containment for delivery lines for processing system.
  54. Schmitt John V., Uniform heat trace and secondary containment for delivery lines for processing system.
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