초록 ▼

Disclosed herein is a sintered silicon carbide composite prepared by sintering a blend comprising from 25 to 85% by weight of silicon carbide, from 1 to 25% by weight of at least one of chromium and chromium compound, from 10 to 70% by weight of at least one of carbide, nitride and boride of element

Disclosed herein is a sintered silicon carbide composite prepared by sintering a blend comprising from 25 to 85% by weight of silicon carbide, from 1 to 25% by weight of at least one of chromium and chromium compound, from 10 to 70% by weight of at least one of carbide, nitride and boride of elements belonging to the groups IVb and Vb of the periodical table, and from 3 to 25% by weight of aluminum oxide, in an inert gas atmosphere at a temperature from 1700°to 2100°C.

대표청구항 ▼

A sintered silicon carbide composite having a relative density of not less than 93%, a specific electrical resistivity of not greater than 10 ohm-cm and a bending strength of not less than 400 MPa, and prepared by sintering a blend consisting essentially of from 25 to 85% by weight of silicon carbid

A sintered silicon carbide composite having a relative density of not less than 93%, a specific electrical resistivity of not greater than 10 ohm-cm and a bending strength of not less than 400 MPa, and prepared by sintering a blend consisting essentially of from 25 to 85% by weight of silicon carbide, from 1 to 25% by weight of at least one of chromium and chromium compound, from 10 to 70% by weight of at least one of carbide, nitride and boride f elements belonging to the groups IVb and Vb of the periodical table, and from 3 to 25% by weight of aluminum oxide, in an inert gas atmosphere at a temperature from 1700°to 2100°in an atmospheric pressure or a reduced pressure.