[특허]Method of using offset gated gap-cell thin film device as a photosensor

Method of using offset gated gap-cell thin film device as a photosensor 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-027/14
출원번호	US-0586462 (1990-09-21)
발명자 / 주소	Hack Michael (Mountain View CA) Thompson Malcolm J. (Menlo Park CA) Tuan Hsing C. (Menlo Park CA)
출원인 / 주소	Xerox Corporation (Stamford CT 02)
인용정보	피인용 횟수 : 36 인용 특허 : 0

초록 ▼

A method of utilizing a thin film device as a photosensor. The thin film device comprises a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in low electrical resistance contact with the charge transport layer, the injecting electrodes being laterally spaced from one another, a gate electrode spaced normally from the first and second injecting electrodes and located opposite the first injecting electrode, for controlling injection therefrom, and laterally offset from the second injecting electrode, and a gate dielectric layer separating the gate electrode from the first and second injecting electrodes and the charge transport layer. The method of utilization comprises applying a first electrical bias of a first magnitude to the first injecting electrode, applying a second electrical bias of a second magnitude to the second injecting electrode, inhibiting charge injection from the first injecting electrode by applying a third electrode bias to the gate electrode of a third magnitude, and illuminating the charge transport layer. The photosensor may be selectively operated in a unity gain mode or in a variable gain mode, wherein said unity gain mode is achieved by causing the second magnitude to be greater than the first magnitude and the variable gain mode is achieved by causing the second magnitude to be less than the first magnitude.

대표청구항 ▼

A method of utilizing a thin film device as a photosensor comprising the steps of providing a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in electrical contact with said charge transport layer and being laterally spaced from one another, a gate electrode spaced normally from said first and second injecting electrodes and located opposite said first injecting electrode and laterally offset from said second injecting electrode, and a gate dielectric layer separating said gate electrode from said first and second injecting electrodes and said charge transport layer, and being characterized by applying a first electrical bias of a first magnitude to said first injecting electrode, applying a second electrical bias of a second magnitude to said second injecting electrode, inhibiting charge injection from said first injecting electrode by applying a third electrical bias to said gate electrode of a third magnitude, illuminating said charge transport layer, and selectively operating said photosensor in one of two modes of operation, said modes being a unity gain mode and a variable gain mode, wherein said unity gain mode is achieved by causing said second magnitude to be greater than said first magnitude and said variable gain mode is achieved by causing said second magnitude to be less than said first magnitude.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

Method of using offset gated gap-cell thin film device as a photosensor 원문보기

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Method of using offset gated gap-cell thin film device as a photosensor 원문보기

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이 특허를 인용한 특허 (36)

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