[특허]Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber

Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G06F-015/20 H01L-021/306
출원번호	US-0464836 (1990-01-16)
발명자 / 주소	Birang Manoocher (Los Gatos CA)
출원인 / 주소	Applied Materials, Inc. (Santa Clara CA 02)
인용정보	피인용 횟수 : 25 인용 특허 : 0

초록 ▼

A method facilitates the display of a filtered signal which represents the variation of light intensity in a processing chamber over time. The filtered signal filters out the effects of a magnetic field which causes plasma within the processing chamber to rotate. The magnetic field is generated by a signal with a period T. Light intensity within the process chamber is detected to produce a voltage signal with a voltage amplitude which varies based on the light intensity within the process chamber. The voltage amplitude of the voltage signal is digitally sampled at a sampling interval to obtain sample values. Running averages of a preselected number of sample values are calculated. The period T is set equal to the preselected number of sample values times the sampling interval times an integer. For each newly displayed running average, a rectangular box may be superimposed over a graph of the running averages in order to graphically display changes in slope. The computer is programmed to look for an anticipated sequence of slopes.

대표청구항 ▼

An apparatus for displaying a filtered signal which represents the variation of light intensity in a processing chamber over time wherein a magnetic field generated by a signal which a period T causes plasma to rotate within the processing chamber, the apparatus comprising: (a) detecting means, coupled to the processing chamber, for detecting the light intensity within the process chamber to produce a voltage signal with a voltage amplitude varying based on the light intensity within the process chamber; (b) sampling means, coupled to the detecting means, for digitally sampling the voltage amplitude of the voltage signal at a sampling interval (I) to obtain sample values (Sx); (c) calculating means, coupled to the sampling means, for calculating running averages (Ry) of a preselected number (N) of sample values (Sx); (d) magnetic signal frequency adjusting means, coupled to the processing chamber, for setting the period T equal to the preselected number (N) times the sampling interval (I) times an integer; (e) display means for displaying in a graph sequential values of the running averages along a y-axis versus time along an x-axis and for highlighting a change in the slope of the graph; and (f) means for changing the processing conditions within said chamber in response to step (e).

이 특허를 인용한 특허 (25)

Bryan K. Choo ; Bhanwar Singh ; Sanjay K. Yedur ; Khoi A. Phan, Analysis of CD-SEM signal to detect scummed/closed contact holes and lines.
상세보기
Pettazzi Giancarlo,ITX ; Riva Emilo,ITX, Apparatus and method for high speed 2D/3D image transformation and display using a pipelined hardware.
상세보기
Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
상세보기
Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
상세보기
Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
상세보기
Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
상세보기
Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.
상세보기
Usui, Tatehito; Yoshioka, Ken; Ikuhara, Shoji; Nishihata, Kouji; Takahashi, Kazue; Kaji, Tetsunori; Nakamoto, Shigeru, Etching end point judging method, etching end point judging device, and insulating film etching method using these methods.
상세보기
Winniczek, Jaroslaw W., Full spectrum endpoint detection.
상세보기
Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
상세보기
Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
상세보기
Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
상세보기
Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
상세보기
Litvak Herbert E. ; Leach Steven C. ; Rodgers Edward G., Interference removal.
상세보기
Brearley William Harrington (Poughkeepsie NY) Forslund Donald Charles (Wappingers Falls NY) Ormond ; Jr. Douglas William (Wappingers Falls NY) Sliss Gerald Joseph (Poughkeepsie NY), Ion milling end point detection method and apparatus.
상세보기
Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
상세보기
Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
상세보기
Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
상세보기
Koshimizu Chishio,JPX ; Saito Susumu,JPX, Method of detecting end point of plasma processing and apparatus for the same.
상세보기
Hofmann, Jim; Sabde, Gundu M.; Kramer, Stephen J.; Moore, Scott E., Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies.
상세보기
Zheng, Bo; Chang, Mei; Sundarrajan, Arvind, Methods of end point detection for substrate fabrication processes.
상세보기
Horioka, Keiji; Yoshida, Yukimasa; Koyama, Shiro, Plasma etching apparatus.
상세보기
Hirano, Taichi; Sato, Kenji, Plasma processing apparatus and probe apparatus.
상세보기
Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
상세보기
Peng Yung-Sung,TWX ; Hwang Yuan-Ko,TWX ; Lee Tsung Tser,TWX ; Lu Jeng Kuen,TWX, Real time monitoring of plasma etching process.
상세보기

IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증

Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

이 특허를 인용한 특허 (25)

관련 콘텐츠

특허 원문 보기

IPC 상위 출원인

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트

연합인증

Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

전체(0) 논문(0) 특허(0) 보고서(0)

전체(0) 논문(0) 특허(0) 보고서(0)

이 특허를 인용한 특허 (25)

관련 콘텐츠

특허 원문 보기

IPC 상위 출원인

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트