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Method of measuring changes in impedance of a variable impedance load by disposing an impedance connected coil within th 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01B-007/14
  • G01R-027/26
  • B24B-049/04
  • H01L-021/306
출원번호 US-0525352 (1990-05-16)
발명자 / 주소
  • Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT)
출원인 / 주소
  • International Business Machines Corp. (Armonk NY 02)
인용정보 피인용 횟수 : 35  인용 특허 : 0

초록

The present invention relates to a method and apparatus for remotely detecting impedance. It is specifically adapted for use on a polishing machine wherein the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected. A first, or stationary co

대표청구항

A method of measuring changes in impedance of a variable impedance load, comprising the steps of: providing a first circuit including a first core having ends which oppose each other and which are separated by an air gap, a first coil wound around said first core, and a current source connected elec

이 특허를 인용한 특허 (35)

  1. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  2. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  3. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  4. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
  5. Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
  6. Nikolenko, Yury; Fauss, Matthew, Apparatus and method of using impedance resonance sensor for thickness measurement.
  7. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.
  8. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Block for polishing a wafer during manufacture of integrated circuits.
  9. Chen Lai-Juh,TWX, Chemical-mechanical polish (CMP) pad conditioner.
  10. Rostoker, Michael D., Detecting the endpoint of chem-mech polishing, and resulting semiconductor device.
  11. Chen Lai-Juh (Hsin-Chu TWX), Electrochemical simulator for chemical-mechanical polishing (CMP).
  12. Nikolenko, Yury, Impedance resonance sensor for real time monitoring of different processes and methods of using same.
  13. Kesil, Boris; Nikolenko, Yury, Impedance sensing systems and methods for use in measuring constituents in solid and fluid objects.
  14. Li Leping ; Barbee Steven George ; Halperin Arnold ; Heinz Tony Frederick, In-situ monitoring and control of conductive films by detecting changes in induced eddy currents.
  15. Li Leping ; Barbee Steven George ; Halperin Arnold ; Heinz Tony Frederick, In-situ monitoring of the change in thickness of films.
  16. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  17. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  18. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  19. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  20. Mei Len,TWX, Method and apparatus for endpoint detection for chemical mechanical polishing using electrical lapping.
  21. Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  22. Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  23. Leach Michael A., Method and structure for polishing a wafer during manufacture of integrated circuits.
  24. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Method and structure for polishing a wafer during manufacture of integrated circuits.
  25. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
  26. Draaisma Eeltje A.,NLX ; Neerhof Hendrik A. J.,NLX, Method of manufacturing a thin-film magnetic head.
  27. Nikolenko, Yury, NMR spectroscopy device based on resonance type impedance (IR) sensor and method of NMR spectra acquisition.
  28. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.
  29. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
  30. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.
  31. Cullen, John J A; Chong, Ellis F H; Langley, Felix L, Rotary transformer.
  32. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  33. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  34. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  35. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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