[특허]Fluidized bed for production of polycrystalline silicon

Fluidized bed for production of polycrystalline silicon 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C01B-033/02
출원번호	US-0551164 (1990-07-11)
발명자 / 주소	Flagella Robert N. (Ridgefield WA)
출원인 / 주소	Advanced Silicon Materials, Inc. (Moses Lake WA 02)
인용정보	피인용 횟수 : 26 인용 특허 : 0

초록 ▼

An improved fluidized bed reactor and a method for utilizing the fluidized bed reactor in the production of, for example, high purity polycrystalline silicon, by the pyrolysis of silane containing gas. The reactor being characterized by an entrainment zone located above a lower reaction zone. The entrainment zone having a cross-sectional area less than or equal to the cross-sectional area of the reaction zone and being capable of maintaining a fluidization gas velocity sufficient to entrain silicon powder particles, yet not sufficient to entrain silicon particles.

대표청구항 ▼

A method for removing silicon powder particles from a reactor that produces polycrystalline silicon by the pyrolysis of a silane containing gas in a fluidized bed reaction zone of silicon seed particles, the method comprising the steps of: (a) introducing the silane containing gas stream into the reaction zone of fluidized silicon seed particles; (b) heterogeneously decomposing the silane containing gas under conditions whereby the silicon heterogeneously decomposes onto the silicon seed particles causing the silicon seed particles to enlarge and segregate as silicon product particles in a collection zone; (c) collecting the silicon product particles from the collection zone; and (d) removing silicon powder particles from the reactor by separating silicon powder particles produced by the homogenous decomposition of the silane containing gas stream from the non-powder silicon particles by passing a fluidizing gas stream through an entrainment zone that extends from the reaction zone to an outlet and has a cross-sectional area perpendicular to the direction of the silane containing gas flow which is less than the cross-sectional area of the reaction zone perpendicular to the direction of the silane containing gas flow, said entrainment zone characterized by a gas velocity which entrains and removes at least 50 percent of the silicon powder particles through the outlet but does not entrain more than 10 percent of the non-powder silicon particles.

이 특허를 인용한 특허 (26)

Martin, Roy W., Composition and method for reducing chemical oxygen demand in water.
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Martin, Roy W., Composition and method for reducing chemical oxygen demand in water.
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Weidhaus, Dieter; Crössmann, Ivo; Schreieder, Franz, Dust-free and pore-free, high-purity granulated polysilicon.
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Osborne, E. Wayne; Spangler, Michael V.; Allen, Levi C.; Geertsen, Robert J.; Ege, Paul E.; Stupin, Walter J.; Zeininger, Gerald, Fluid bed reactor.
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Osborne, E. Wayne; Spangler, Michael V.; Allen, Levi C.; Geertsen, Robert J.; Ege, Paul E.; Stupin, Walter J.; Zeininger, Gerald, Fluid bed reactor.
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Sanchez, Javier San Segundo; Barona, Jose Luis Montesinos; Conejero, Evaristo Ayuso; Canle, Manuel Vicente Vales; Rel, Xavier Benavides; Garcia, Pedro-Tomas Lujan; Martinez, Maria Tomas, Fluidized bed reactor for production of high purity silicon.
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Sanchez, Javier San Segundo; Barona, Jose Luis Montesinos; Conejero, Evaristo Ayuso; Canle, Manuel Vicente Vales; Rel, Xavier Benavides; Garcia, Pedro-Tomas Lujan; Martinez, Maria Tomas, Fluidized bed reactor for production of high purity silicon.
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Sanjurjo Angel ; Lau Kai-Hung ; Lowe David M. ; Jiang Liqiang, Fluidized bed reactor to deposit a material on a surface by chemical vapor deposition, and methods of forming a coated s.
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Hertlein, Harald; Hauswirth, Rainer; Weidhaus, Dieter, Granular polycrystalline silicon and production thereof.
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Miller, Matthew J.; Spangler, Michael V.; Zeininger, Gerald A.; Onstot, William J.; Stupin, Walter J., Joint design for segmented silicon carbide liner in a fluidized bed reactor.
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Blencoe, James G., Magnesiothermic methods of producing high-purity silicon.
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Miller, Matthew J.; Spangler, Michael V., Method and apparatus to reduce contamination of particles in a fluidized bed reactor.
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Kim, Hee Young; Yoon, Kyung Koo; Park, Yong Ki; Choi, Won Choon, Method for continual preparation of polycrystalline silicon using a fluidized bed reactor.
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Kim, Hee Young; Yoon, Kyung Koo; Park, Yong Ki; Choi, Won Choon, Method for continual preparation of polycrystalline silicon using a fluidized bed reactor.
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Mleczko, Leslaw; Buchholz, Sigurd; Ezpeleta Tejero, Maria Pilar; Schl?ter, Felix-Karl Oliver, Method for producing highly pure, granular silicon.
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Furquan, Mohammad; Vijayalakshmi, Savithri; Mitra, Sagar, Method of preparing silicon from sand.
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Froehlich, Robert; Mixon, David, Methods and system for cooling a reaction effluent gas.
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Yilmaz, Sefa; Miller, Matthew J.; Spangler, Michael V.; Wemp, Barry; Julsrud, Stein, Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor.
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Miller, Matthew; Spangler, Michael V.; Wemp, Barry; Osborne, E. Wayne, Probe assembly for a fluid bed reactor.
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Engelhardt Fritz ; Mayer Manfred,DEX ; Nickel Uwe,DEX, Process for the preparation of hydrophilic hydrogels of high swelling capacity.
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Chu, Xi, Reactor and method for producing high-purity granular silicon.
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Froehlich, Robert; Fieselmann, Ben; Mixon, David; Tsuo, York, Reactor with silicide-coated metal surfaces.
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Osborne, E. Wayne; Miller, Matthew J.; Spangler, Michael V.; Zeininger, Gerald A.; Onstot, William J.; Stupin, Walter J., Segmented silicon carbide liner.
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Adler, Peter; Gölz, Andreas; Kirchner, Holger; Müller, Armin; Sill, Torsten; Sonnenschein, Raymund, Silicon and method for producing the same.
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Lord Stephen M. ; Milligan Robert J., Silicon deposition reactor apparatus.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Fluidized bed for production of polycrystalline silicon 원문보기

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Fluidized bed for production of polycrystalline silicon 원문보기

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