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Low temperature crystallization and pattering of amorphous silicon films 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/324
출원번호 US-0563232 (1990-08-06)
발명자 / 주소
  • Liu Gang (State College PA) Kakkad Ramesh H. (State College PA) Fonash Stephen J. (State College PA)
출원인 / 주소
  • The Pennsylvania Research Corporation (University Park PA 02)
인용정보 피인용 횟수 : 394  인용 특허 : 0

초록 ▼

The 700°C./4 min. rapid thermal anneal described in the prior art for converting amorphous Si to polycrystalline Si can be reduced to a temperature range of from 550°C. to 650°C. This is accomplished by depositing a very thin discontinuous film of a nucleating site forming material over the amorphou

대표청구항 ▼

A method for producing a polycrystalline silicon film, comprising the steps of: a. disposing a thin discontinuous film of a nucleating site forming material in contact with a surface of an amorphous silicon film; and b. annealing the films by heating said films to a temperature below that which woul

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  128. Jang Jin,KRX ; Yoon Soo-Young,KRX ; Oh Jae-Young,KRX, Method of crystallizing an amorphous film.
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  129. Jang Jin,KRX ; Yoon Soo Young,KRX ; Kim Hyun Churl,KRX, Method of crystallizing an amorphous silicon layer.
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  130. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Takemura Yasuhiko,JPX, Method of crystallizing thin films when manufacturing semiconductor devices.
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  131. Chen Chun Ya, Method of detecting metal contaminants in a wet chemical using enhanced semiconductor growth phenomena.
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  132. Hirao Shuji (Osaka JPX) Ogawa Hisashi (Katano JPX) Terai Yuka (Osaka JPX) Sekiguchi Mitsuru (Hirakata JPX) Fukumoto Masanori (Osaka JPX) Miyanaga Isao (Moriguchi JPX), Method of fabricating a semiconductor device.
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  133. Yasuhiko Takemura JP, Method of fabricating a semiconductor device.
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  134. Fukunaga,Takeshi; Ohtani,Hisashi; Miyanaga,Akiharu, Method of fabricating a semiconductor device utilizing a catalyst material solution.
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  135. Kokubo,Chiho; Shiga,Aiko; Tanada,Yoshifumi; Yamazaki,Shunpei, Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam.
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  136. Makita Naoki,JPX ; Funai Takashi,JPX ; Takayama Toru,JPX, Method of fabricating a thin film transistor.
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  137. Zhang Hongyong,JPX ; Teramoto Satoshi,JPX, Method of fabricating a thin film transistor.
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  138. Zhang, Hongyong; Teramoto, Satoshi, Method of fabricating a thin film transistor.
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  139. Nakajima,Setsuo; Ohtani,Hisashi, Method of fabricating semiconductor device.
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  140. Teramoto Satoshi,JPX ; Takenouchi Akira,JPX ; Ohtani Hisashi,JPX, Method of fabricating semiconductor device.
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  141. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Teramoto Satoshi,JPX, Method of fabricating semiconductor device.
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  142. Adachi Hiroki,JPX ; Goto Yuugo,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX, Method of fabricating semiconductor device and method of processing substrate.
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  143. Ohtani, Hisashi; Mitsuki, Toru, Method of fabricating semiconductor devices.
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  144. Ohtani Hisashi,JPX ; Mitsuki Toru,JPX, Method of fabricating semiconductor devices by crystallizing amorphous silicon with nickel.
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  145. Joo Seung-Ki,KRX ; Kim Tae-Kyung,KRX, Method of fabricating thin film transistor.
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  146. Joo, Seung-Ki; Kim, Tae-Kyung, Method of fabricating thin film transistor.
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  147. Naoto Kusumoto JP; Yasuhiko Takemura JP; Hisashi Ohtani JP, Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region.
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  148. Nakajima, Setsuo; Ohtani, Hisashi, Method of forming a semiconductor device using a group XV element for gettering by means of infrared light.
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  149. Zhang Hongyong (Kanagawa JPX) Uochi Hideki (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX), Method of forming a thin film transistor.
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  150. Takemura Hisashi (Tokyo JPX), Method of forming bipolar junction transistor of epitaxial planar type.
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  151. Maekawa Masashi, Method of forming polycrystalline film by steps including introduction of nickel and rapid thermal anneal.
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  152. Imahashi Issei,JPX ; Hama Kiichi,JPX ; Hata Jiro,JPX, Method of forming polycrystalline silicon film in process of manufacturing LCD.
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  153. Zhang, Hongyong; Uochi, Hideki; Miyanaga, Akira; Ohtani, Hisashi, Method of forming semiconductor device by crystallizing amorphous silicon and forming crystallization promoting material in the same chamber.
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  154. Shunpei Yamazaki JP; Mitsunori Sakama JP; Yasuhiko Takemura JP, Method of making crystal silicon semiconductor and thin film transistor.
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  155. Takemura Yasuhiko (Kanagawa JPX), Method of making thin film transistor using lateral crystallization.
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  156. Hisashi Ohtani JP; Akiharu Miyanaga JP; Junichi Takeyama JP, Method of manufacturing a semiconductor device.
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  157. Isobe,Atsuo; Arao,Tatsuya, Method of manufacturing a semiconductor device.
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  158. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Takeyama Junichi,JPX, Method of manufacturing a semiconductor device.
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  159. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Takeyama Junichi,JPX, Method of manufacturing a semiconductor device.
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  160. Takemura, Yasuhiko; Zhang, Hongyong; Teramoto, Satoshi, Method of manufacturing a semiconductor device.
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  161. Yamamoto Yoshitaka,JPX ; Suzawa Hideomi,JPX ; Awane Katunobu,JPX ; Funada Fumiaki,JPX ; Yamazaki Shunpei,JPX, Method of manufacturing a semiconductor device.
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  162. Yamazaki, Shunpei; Arai, Yasuyuki; Teramoto, Satoshi, Method of manufacturing a semiconductor device.
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  163. Yamazaki,Shunpei; Arai,Yasuyuki; Teramoto,Satoshi, Method of manufacturing a semiconductor device.
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  164. Yamazaki,Shunpei; Arai,Yasuyuki; Teramoto,Satoshi, Method of manufacturing a semiconductor device.
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  165. Yamazaki,Shunpei; Arai,Yasuyuki; Teramoto,Satoshi, Method of manufacturing a semiconductor device.
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  166. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.
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  167. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method of manufacturing a semiconductor device.
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  168. Zhang, Hongyong; Kusumoto, Naoto, Method of manufacturing a semiconductor device.
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  169. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Ohnuma, Hideto, Method of manufacturing a semiconductor device and manufacturing system thereof.
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  170. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Ohnuma, Hideto, Method of manufacturing a semiconductor device and manufacturing system thereof.
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  171. Mitsuki, Toru; Shichi, Takeshi; Maekawa, Shinji; Shibata, Hiroshi; Miyanaga, Akiharu, Method of manufacturing a semiconductor device having a crystallized semiconductor film.
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  172. Zhang, Hongyong; Takemura, Yasuhiko; Konuma, Toshimitsu; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki, Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions.
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  173. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Method of manufacturing a semiconductor device that includes heating the gate insulating film.
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  174. Yamazaki,Shunpei; Shibata,Hiroshi; Tanaka,Koichiro; Hiroki,Masaaki; Akiba,Mai, Method of manufacturing a semiconductor device that includes patterning sub-islands.
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  175. Isobe, Atsuo; Arao, Tatsuya, Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization.
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  176. Shunpei Yamazaki JP, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.
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  177. Yamazaki, Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.
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  178. Yamazaki,Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device by transferring crystallization promoting material in the first semiconductor film to the second semico.
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  179. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method of manufacturing a thin film transistor device.
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  180. Murley, Darren T.; Trainor, Michael J., Method of manufacturing a transistor.
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  181. Hiroki, Masamitsu; Takemura, Yasuhiko; Yamamoto, Mutsuo; Yamaguchi, Naoaki; Teramoto, Satoshi, Method of manufacturing an active matrix type device.
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  182. Koda Munetaka (Chiba JPX) Shida Yoshikatsu (Chiba JPX) Kawaguchi Junichi (Chiba JPX) Murakami Takehiro (Chiba JPX) Kaneko Yoshio (Chiba JPX), Method of manufacturing fet semiconductor devices with polysilicon gate having large grain sizes.
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  183. Shunpei Yamazaki JP; Yasuyuki Arai JP; Satoshi Teramoto JP, Method of manufacturing flexible display with transfer from auxiliary substrate.
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  184. Ohtani Hisashi,JPX, Method of manufacturing semiconductor device.
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  185. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Takeyama Junichi,JPX, Method of preparing a semiconductor having a controlled crystal orientation.
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  186. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi; Takeyama, Junichi, Method of preparing a semiconductor having controlled crystal orientation.
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  187. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of producing crystalline semiconductor.
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  188. Watanabe Hirohito,JPX ; Honma Ichiro,JPX, Method of producing silicon layer having surface controlled to be uneven or even.
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  189. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Miyanaga Akira,JPX ; Ohtani Hisashi,JPX, Method of promoting crystallization of an amorphous semiconductor film using organic metal CVD.
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  190. Fonash Stephen J. ; Kingi Reece,NZX ; Kalkan Ali K., Methods for modifying solid phase crystallization kinetics for A-Si films.
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  191. Kakkad,Ramesh, Methods of fabricating crystalline silicon film and thin film transistors.
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  192. Fonash Stephen J. ; Kalkan A. Kaan, Nanostructure tailoring of material properties using controlled crystallization.
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  193. Naoaki Yamaguchi JP; Koichiro Tanaka JP; Satoshi Teramoto JP, Optical processing apparatus and optical processing method.
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  194. Yamaguchi, Naoaki; Tanaka, Koichiro; Teramoto, Satoshi, Optical processing apparatus and optical processing method.
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  195. Yamaguchi,Naoaki; Tanaka,Koichiro; Teramoto,Satoshi, Optical processing apparatus and optical processing method.
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  196. Yamaguchi Naoaki,JPX ; Tanaka Koichiro,JPX ; Teramoto Satoshi,JPX, Optical processing method with control of the illumination energy of laser light.
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  197. Kuo Yue, Polysilicon grown by pulsed rapid thermal annealing.
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  198. Seong Moh Seo KR, Polysilicon thin film transistor and method of manufacturing the same.
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  199. Brigham, Lawrence N.; Jan, Chia-Hong; Zhang, Binglong, Polysilicon/amorphous silicon composite gate electrode.
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  200. Ohtani Hisashi,JPX ; Adachi Hiroki,JPX, Process for crystallizing an amorphous silicon film and apparatus for fabricating the same.
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  201. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Process for fabricating a thin film transistor semiconductor device.
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  202. Takayama, Toru; Zhang, Hongyong; Yamazaki, Shunpei; Takemura, Yasuhiko, Process for fabricating semiconductor and process for fabricating semiconductor device.
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  203. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.
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  204. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.
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  205. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.
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  206. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating semiconductor device.
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  207. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating semiconductor device.
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  208. Ohtani,Hisashi; Fukunaga,Takeshi; Miyanaga,Akiharu, Process for fabricating semiconductor device.
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  209. Takemura Yasuhiko,JPX, Process for fabricating semiconductor device.
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  210. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating thin film transistors.
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  211. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.
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  212. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.
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  213. Takayama Toru (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallize.
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  214. Kusumoto Naoto,JPX ; Takemura Yasuhiko,JPX ; Ohtani Hisashi,JPX, Production method for a thin film semiconductor device with an alignment marker made out of the same layer as the active.
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  215. Miyanaga, Akiharu; Mukao, Kyouichi, Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer.
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  216. Miyanaga, Akiharu; Mukao, Kyouichi, Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer.
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  217. Miyanaga,Akiharu; Mukao,Kyouichi, Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer.
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  218. Richardson, Christine; Atwater, Harry A., Robust filament assembly for a hot-wire chemical vapor deposition system.
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  219. Maekawa Masashi ; Nakata Yukihiko, Selected site, metal-induced, continuous crystallization method.
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  220. Maekawa Masashi, Selective silicide thin-film transistor and method for same.
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  221. Maekawa Masashi, Selective silicide thin-film transistor having polysilicon active layers with crystallizing metal agent introduced only in the source/drain regions.
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  222. Koyama Jun,JPX ; Takemura Yasuhiko,JPX ; Hayakawa Masahiko,JPX ; Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor active matrix circuit.
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  223. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
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  224. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor and process for fabricating the same.
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  225. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor and process for fabricating the same.
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  226. Kasahara, Kenji, Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof.
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  227. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Semiconductor circuit and method of fabricating the same.
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  228. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Semiconductor circuit and method of fabricating the same.
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  229. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Semiconductor circuit for electro-optical device and method of manufacturing the same.
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  230. Akiharu Mitanaga JP; Hisashi Ohtani JP; Satoshi Teramoto JP, Semiconductor device.
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  231. Mitanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Teramoto Satoshi,JPX, Semiconductor device.
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  232. Ohnuma, Hideto, Semiconductor device.
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  233. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.
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  234. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu, Semiconductor device and fabrication method of the same.
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  235. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
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  236. Yamazaki, Shunpei; Teramoto, Satoshi, Semiconductor device and fabrication method thereof.
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  237. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
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  238. Shunpei Yamazaki JP, Semiconductor device and its manufacturing method.
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  239. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
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  240. Yamazaki Shunpei,JPX, Semiconductor device and its manufacturing method.
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  241. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
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  242. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
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  243. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
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  244. Kokubo, Chiho; Shiga, Aiko; Tanada, Yoshifumi; Yamazaki, Shunpei, Semiconductor device and manufacturing method therefor.
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  245. Yamazaki, Shunpei; Suzawa, Hideomi; Kusuyama, Yoshihiro; Ono, Koji; Koyama, Jun, Semiconductor device and manufacturing method thereof.
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  246. Yamazaki, Shunpei; Suzawa, Hideomi; Kusuyama, Yoshihiro; Ono, Koji; Koyama, Jun, Semiconductor device and manufacturing method thereof.
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  247. Yamazaki, Shunpei; Suzawa, Hideomi; Kusuyama, Yoshihiro; Ono, Koji; Koyama, Jun, Semiconductor device and manufacturing method thereof.
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  248. Yamazaki,Shunpei; Suzawa,Hideomi; Kusuyama,Yoshihiro; Ono,Koji; Koyama,Jun, Semiconductor device and manufacturing method thereof.
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  249. Yamazaki,Shunpei; Suzawa,Hideomi; Kusuyama,Yoshihiro; Ono,Koji; Koyama,Jun, Semiconductor device and manufacturing method thereof.
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  250. Zhang, Hongyong, Semiconductor device and manufacturing method thereof.
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  251. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  252. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  253. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
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  254. Satoshi Teramoto JP, Semiconductor device and method for forming the same.
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  255. Takemura, Yasuhiko; Zhang, Hongyong; Teramoto, Satoshi, Semiconductor device and method for forming the same.
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  256. Takemura, Yasuhiko; Zhang, Hongyong; Teramoto, Satoshi, Semiconductor device and method for forming the same.
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  257. Takemura, Yasuhiko; Zhang, Hongyong; Teramoto, Satoshi, Semiconductor device and method for forming the same.
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  258. Teramoto, Satoshi, Semiconductor device and method for forming the same.
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  259. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.
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  260. Yamazaki, Shunpei; Zhang, Hongyong; Takemura, Yasuhiko, Semiconductor device and method for forming the same.
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  261. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
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  262. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
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  263. Koyama Jun,JPX ; Suzawa Hideomi,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for its fabrication.
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  264. Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX ; Takayama Toru,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Takeyama Junichi,JPX, Semiconductor device and method for its preparation.
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  265. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi; Takeyama, Junichi, Semiconductor device and method for its preparation.
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  266. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi; Takeyama,Junichi, Semiconductor device and method for its preparation.
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  267. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  268. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  269. Akiharu Miyanaga JP; Hisashi Ohtani JP; Satoshi Teramoto JP, Semiconductor device and method for manufacturing the same.
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  270. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
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  271. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
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  272. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  273. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  274. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
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  275. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  276. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  315. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
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  316. Shunpei Yamazaki JP; Akiharu Miyanaga JP; Satoshi Teramoto JP, Semiconductor device comprising a semiconductor film having substantially no grain boundary.
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  317. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
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  318. Makita Naoki,JPX ; Funai Takashi,JPX ; Yamamoto Yoshitaka,JPX ; Mitani Yasuhiro,JPX ; Nomura Katsumi,JPX ; Miyamoto Tadayoshi,JPX ; Kosai Takamasa,JPX, Semiconductor device formed within asymetrically-shaped seed crystal region.
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  324. Teramoto, Satoshi, Semiconductor device having SiOxNy film.
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  325. Teramoto, Satoshi, Semiconductor device having SiOxNy gate insulating film.
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  328. Takemura Yasuhiko (Kanagawa JPX), Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either v.
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  329. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Semiconductor device having a monocrystalline layer composed of carbon, oxygen, hydrogen and nitrogen atoms.
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  332. Hayakawa Masahiko,JPX, Semiconductor device having an active layer with separate layers where one of the layers acts as crystal nuclei for the.
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  333. Yamazaki, Shunpei; Zhang, Hongyong; Takemura, Yasuhiko, Semiconductor device having an aluminum nitride film.
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  334. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
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  335. Zhang Hongyong,JPX, Semiconductor device having improved crystal orientation.
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  336. Zhang Hongyong,JPX, Semiconductor device having improved crystal orientation.
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  338. Yamazaki, Shunpei; Adachi, Hiroki; Kuwabara, Hideaki, Semiconductor device having semiconductor circuit comprising semiconductor element, and method for manufacturing same.
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  339. Yamazaki, Shunpei; Teramoto, Satoshi, Semiconductor device having thin film transistor.
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  340. Kasahara,Kenji, Semiconductor device having two insulating films provided over a substrate.
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  341. Yamazaki Shunpei (Tokyo JPX) Teramoto Satoshi (Kanagawa JPX), Semiconductor device including a silicon film having an irregular surface.
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  342. Yamazaki, Shunpei, Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof.
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  345. Ohtani,Hisashi; Miyanaga,Akiharu; Zhang,Hongyong; Yamaguchi,Naoaki, Semiconductor device with residual nickel from crystallization of semiconductor film.
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  346. Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Semiconductor device/circuit having at least partially crystallized semiconductor layer.
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  349. Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor material, a semiconductor device using the same, and a manufacturing method thereof.
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  352. Ping Er-Xang ; Thakur Randhir P. S., Semiconductor processing method of providing a doped polysilicon layer.
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  355. Hisashi Ohtani JP; Akiharu Miyanaga JP; Takeshi Fukunaga JP; Hongyong Zhang JP, Semiconductor thin film transistor with crystal orientation.
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  356. Yamazaki Shunpei (Tokyo JPX) Takemura Yasuhiko (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Uochi Hideki (Atsugi JPX), Semiconductor, semiconductor device, and method for fabricating the same.
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  358. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
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  359. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
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  360. Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong; Takayama,Toru; Uochi,Hideki, Semiconductor, semiconductor device, and method for fabricating the same.
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  363. Maekawa, Masashi; Nakata, Yukihiko, Single crystal TFT from continuous transition metal delivery method.
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  364. Masashi Maekawa JP; Yukihiko Nakata, Single crystal TFT from continuous transition metal delivery method.
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  365. King Tsu-Jae ; Ho Jackson H., Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates.
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  366. Konuma,Toshimitsu, Solution applying apparatus and method.
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  367. Konuma Toshimitsu,JPX, Solution applying method.
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  368. Voutsas,Apostolos T.; Hartzell,John W., Structures with seeded single-crystal domains.
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  369. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
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  370. Kusumoto, Naoto; Takemura, Yasuhiko; Ohtani, Hisashi, Thin film semiconductor device and production method for the same.
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  371. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization prom.
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  372. Zhang Hongyong (Kanagawa JPX) Uochi Hideki (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Fukunaga Takeshi (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Thin film transistor.
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  373. Park, Byoung-Keon; Seo, Jin-Wook; Yang, Tae-Hoon; Lee, Ki-Yong, Thin film transistor and method of fabricating the same.
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  374. Yasuhiko Takemura JP; Hongyong Zhang JP; Satoshi Teramoto JP, Thin film transistor having enhanced field mobility.
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  375. Uochi Hideki,JPX ; Takemura Yasuhiko,JPX, Thin film transistor including a catalytic element for promoting crystallization of a semiconductor film.
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  376. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin film transistor using a semiconductor film.
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  377. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
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  378. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
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  379. Yamazaki, Shunpei; Teramoto, Satoshi, Thin film type monolithic semiconductor device.
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  380. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
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  381. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.
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  382. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
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  383. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor having a catalyst element in its active regions.
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  384. Maekawa Masashi, Thin-film transistor polycrystalline film formation by nickel induced, rapid thermal annealing method.
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  385. Uochi Hideki,JPX ; Takemura Yasuhiko,JPX, Transistor and method of forming the same.
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  386. Zhang Hongyong (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Transistor and process for fabricating the same.
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  387. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Transistor and process for fabricating the same.
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  388. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Transistor and process for fabricating the same.
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  389. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Transistor and process for fabricating the same.
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  390. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device.
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  391. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device having columnar crystals.
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  392. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi, Transistor and semiconductor device having columnar crystals.
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  393. Hideki Uochi JP; Yasuhiko Takemura JP, Transistor device and method of forming the same.
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  394. Nanba Norihiro,JPX, Zoom lens and optical apparatus having the same.
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