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Optical integrated circuit designed to operate by use of photons 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G02B-006/12
출원번호 US-0777888 (1991-10-16)
발명자 / 주소
  • Levi Anthony F. J. (Summit NJ) McCall Samuel L. (Chatham NJ) Slusher Richart E. (Lebanon NJ)
출원인 / 주소
  • AT&T Bell Laboratories (Murray Hill NJ 02)
인용정보 피인용 횟수 : 53  인용 특허 : 0

초록 ▼

Optical integrated circuitry, performing various of the functions associated with electronic integrated circuitry, is disclosed. Fabrication, importantly to achieve high circuit chip density－typically in the range of 106 as including both devices and interconnecting guides－is dependent upon device/s

대표청구항 ▼

Apparatus comprising an integrated circuit chip portion which is designed to operate by use of photons within the wavelength range of from 0.3 m10.0 m50% of said active and passive devices are of a functional layer thickness as measured orthogonal to a plane of transmission path direction, of mathem

이 특허를 인용한 특허 (53)

  1. Michael Scalora ; Mark J. Bloemer ; Salvatore Baglio, Apparatus and method for controlling optics propagation based on a transparent metal stack.
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  2. Janzen, Jeffery W, Configurable inputs and outputs for memory stacking system and method.
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  3. Janzen, Jeffrey W., Configurable inputs and outputs for memory stacking system and method.
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  4. D'Aguanno, Giuseppe; Centini, Marco; Sibilia, Concita; Scalora, Michael; Bloemer, Mark, Efficient non-linear phase shifting using a photonic band gap structure.
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  5. Tuttle, Mark E., Electronic communication devices, methods of forming electrical communication devices, and communications methods.
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  6. Passlack, Matthias; Hartin, Olin L.; Ray, Marcus; Medendorp, Nicholas, Enhancement mode metal-oxide-semiconductor field effect transistor.
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  7. Vieira,Amarildo J. C.; Barenburg,Barbara F.; Brophy,Timothy J., Fabrication of a wavelength locker within a semiconductor structure.
    상세보기
  8. Liang, Yong; Droopad, Ravindranath; Li, Hao; Yu, Zhiyi, Ferromagnetic semiconductor structure and method for forming the same.
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  9. Doyle,Gary R.; Goodnow,Kenneth J.; Harding,Riyon W.; Kampf,Francis A.; Norman,Jason M.; Ventrone,Sebastian T., Fiber optic transmission lines on an SOC.
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  10. El Zein,Nada; Ramdani,Jamal; Eisenbeiser,Kurt; Droopad,Ravindranath, Heterojunction tunneling diodes and process for fabricating same.
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  11. Spillane, Sean M.; Beausoleil, Raymond G., Integrated circuit device having optically coupled layers.
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  12. Ooms,William J.; Hallmark,Jerald A., Method and apparatus utilizing monocrystalline insulator.
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  13. Ramdani, Jamal; Droopad, Ravindranath; Yu, Zhiyi, Method for fabricating a semiconductor structure including a metal oxide interface with silicon.
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  14. Liang,Yong; Droopad,Ravindranath; Hu,Xiaoming; Wang,Jun; Wei,Yi; Yu,Zhiyi, Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process.
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  15. Li, Hao; Droopad, Ravindranath; Marshall, Daniel S.; Wei, Yi; Hu, Xiao M.; Liang, Yong, Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate.
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  16. Tuttle Mark E. ; Tuttle John R. ; Lake Rickie C., Method of manufacturing an enclosed transceiver.
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  17. Tuttle Mark E. ; Tuttle John R. ; Lake Rickie C., Method of manufacturing an enclosed transceiver.
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  18. Tuttle Mark E. ; Tuttle John R. ; Lake Rickie C., Method of manufacturing an enclosed transceiver.
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  19. Tuttle Mark E. ; Tuttle John R. ; Lake Rickie C., Method of manufacturing an enclosed transceiver.
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  20. Tuttle Mark E. ; Tuttle John R. ; Lake Rickie C., Method of manufacturing an enclosed transceiver.
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  21. Tuttle, Mark E.; Tuttle, John R.; Lake, Rickie C., Method of manufacturing an enclosed transceiver.
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  22. Hu, Xiaoming; Craigo, James B.; Droopad, Ravindranath; Edwards, Jr., John L.; Liang, Yong; Wei, Yi; Yu, Zhiyi, Method of removing silicon oxide from a surface of a substrate.
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  23. Tuttle,Mark E.; Lake,Rickie C., Methods for forming integrated circuits within substrates.
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  24. Fork Richard Lynn ; Jones Darryl Keith ; Keys Andrew Scott, Microresonator and associated method for producing and controlling photonic signals with a photonic bandgap delay apparatus.
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  25. Tuttle John R., Miniature Radio Frequency Transceiver.
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  26. Franke, Martin, Photodiode configuration having two photodiodes, a laser diode configuration having the photodiode configuration, and method for connecting the photodiode configuration to a substrate.
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  27. Michael Scalora, Photonic band gap device and method using a periodicity defect region doped with a gain medium to increase photonic signal delay.
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  28. Michael Scalora ; Mark J. Bloemer ; Michael D. Tocci, Photonic band gap device and method using a periodicity defect region to increase photonic signal delay.
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  29. Scalora Michael ; Bloemer Mark J., Photonic signal frequency conversion using a photonic band gap structure.
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  30. Scalora, Michael; Bloemer, Mark J.; Centini, Marco; D'Aguanno, Giuseppe, Photonic signal frequency up and down-conversion using a photonic band gap structure.
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  31. Giuseppe D'Aguanno IT; Marco Centini IT; Concita Sibilia IT; Michael Scalora ; Mark Bloemer, Photonic signal reflectivity and transmissivity control using a photonic band gap structure.
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  32. Tuttle, John R., Radio frequency identification device and method.
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  33. Tuttle, John R., Radio frequency identification device and method.
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  34. Tuttle, John R., Radio frequency identification device and method.
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  35. Eisenbeiser,Kurt; Wang,Jun; Droopad,Ravindranath, Semiconductor device and method.
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  36. Hirota, Toshiyuki, Semiconductor device package having a switcher connecting plural processing elements.
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  37. Yu,Zhiyi; Droopad,Ravindranath, Semiconductor structure exhibiting reduced leakage current and method of fabricating same.
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  38. Ramdani,Jamal; Droopad,Ravindranath; Hilt,Lyndee L.; Eisenbeiser,Kurt Williamson, Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.
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  39. Yamamoto, Shuhei; Hirano, Yoshihito; Shoji, Ichiro; Taira, Takunori; Kurimura, Sunao, Solid-state light source apparatus.
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  40. Ramdani,Jamal; Hilt,Lyndee L., Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate.
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  41. Emrick, Rudy M.; Bosco, Bruce Allen; Holmes, John E.; Franson, Steven James; Rockwell, Stephen Kent, Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same.
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  42. Eisenbeiser, Kurt W.; Yu, Zhiyi; Droopad, Ravindranath, Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same.
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  43. Holm, Paige M.; Barenburg, Barbara Foley; Yamamoto, Joyce K.; Richard, Fred V., Structure and method for fabricating semiconductor microresonator devices.
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  44. Lempkowski,Robert; Chason,Marc, Structure and method for fabricating semiconductor structures and devices for detecting an object.
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  45. Tungare,Aroon; Klosowiak,Tomasz L., Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials.
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  46. Tuttle, John R., System and method to track articles at a point of origin and at a point of destination using RFID.
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  47. McCabe Arthur Barney ; Tuttle John R. ; Wood ; Jr. Clifton W., Tamper resistant smart card and method of protecting data in a smart card.
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  48. Tuttle John R. ; Wood ; Jr. Clifton W. ; McCabe Arthur Barney, Tamper resistant smart card and method of protecting data in a smart card.
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  49. Tuttle John R. ; Wood ; Jr. Clifton W. ; McCabe Arthur Barney, Tamper resistant smart card and method of protecting data in a smart card.
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  50. Lee, Sang-Hoon; Byun, Eun-Jo; Woo, Cheol-Jong; Oh, Se-Jang, Test interface device, test system and optical interface memory device.
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  51. Tuttle,John R., Thin flexible, RFID labels, and method and apparatus for use.
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  52. Tuttle,John R., Thin, flexible, RFID label and system for use.
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  53. Scalora Michael, Transparent metallo-dielectric photonic band gap structure.
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