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High-voltage solid-state switching devices 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • F41B-006/00
출원번호 US-0724177 (1991-07-01)
발명자 / 주소
  • Bowles Edward E. (San Diego CA)
출원인 / 주소
  • General Atomics (San Diego CA 02)
인용정보 피인용 횟수 : 43  인용 특허 : 0

초록

High-voltage, solid-state switches that are capable of interrupting current, offer relatively low on-state losses (low forward voltage drop) and provide for high current densities. Low-voltage transistors and silicon-controlled rectifiers are employed to achieve low power losses at high current dens

대표청구항

A solid-state switch for controlling a source of direct current, said switch comprising: first, second, third, and fourth switching elements, each of said switching elements having a first terminal, a second terminal, and a control signal input terminal; said first switching element providing a low

이 특허를 인용한 특허 (43)

  1. Yang, Tai-Her, Automatically controlled dc power supply output circuit for shunting the power supply output in response to stored voltage of counter EMF generated by the load.
  2. Webster Paul Donald,GBX, Control circuit and system for a switched reluctance machine and method of operating.
  3. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Edge termination structure employing recesses for edge termination elements.
  4. Mansfield, Francis Allen, Electromagnetic launcher.
  5. Wortman Donald E. ; Bruno John D. ; Bahder Thomas B., Electromagnetic launcher with pulse-shaping armature and divided rails.
  6. Ryu, Sei-Hyung; Capell, Doyle Craig; Cheng, Lin; Dhar, Sarit; Jonas, Charlotte; Agarwal, Anant; Palmour, John, Field effect transistor devices with low source resistance.
  7. Ryu, Sei-Hyung; Capell, Doyle Craig; Cheng, Lin; Dhar, Sarit; Jonas, Charlotte; Agarwal, Anant; Palmour, John, Field effect transistor devices with low source resistance.
  8. Zhang, Qingchun, High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability.
  9. Das, Mrinal K.; Lin, Henry; Schupbach, Marcelo; Palmour, John Williams, High current, low switching loss SiC power module.
  10. Das, Mrinal K.; Lin, Henry; Schupbach, Marcelo; Palmour, John Williams, High current, low switching loss SiC power module.
  11. Das, Mrinal K.; Callanan, Robert J.; Lin, Henry; Palmour, John Williams, High performance power module.
  12. Zhang, Qingchun; Ryu, Sei-Hyung; Jonas, Charlotte; Agarwal, Anant K., High power insulated gate bipolar transistors.
  13. Zhang, Qingchun; Ryu, Sei-Hyung; Jonas, Charlotte; Agarwal, Anant K., High power insulated gate bipolar transistors.
  14. Ryu, Sei-Hyung; Zhang, Qingchun, High voltage insulated gate bipolar transistors with minority carrier diverter.
  15. Hennessy,Michael J.; Mueller,Eduard K., Hybrid switch.
  16. Maier, II, William Bryan, Inductive pulse forming network for high-current, high-power applications.
  17. Maier, II, William Bryan, Inductive pulse forming network for high-current, high-power applications.
  18. Park Jae-Hong,KRX, Insulated gate bipolar junction transistors having built-in freewheeling diodes therein.
  19. Zhang, Qingchun, Insulated gate bipolar transistors including current suppressing layers.
  20. Zhang, Qingchun, Insulated gate bipolar transistors including current suppressing layers.
  21. Zhang, Qingchun; Ryu, Sei-Hyung, Junction Barrier Schottky diodes with current surge capability.
  22. Park Jae-Hong (Kyungki-do KRX), Methods of forming insulated gate bipolar transistors having built-in freewheeling diodes and transistors formed thereby.
  23. Tofigh, Farshid; Kruppa, Otmar; Khan, Imtiaz; Ghahramani, Iraj; Lawton, David; Policky, Kent, Power distribution system using solid state power controllers.
  24. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Power module for supporting high current densities.
  25. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Power module having a switch module for supporting high current densities.
  26. Zhang, Qingchun; Richmond, James Theodore; Agarwal, Anant K.; Ryu, Sei-Hyung, Power switching devices having controllable surge current capabilities.
  27. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Schottky diode.
  28. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Schottky diode.
  29. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Schottky diode.
  30. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Schottky diode employing recesses for elements of junction barrier array.
  31. Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant, Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same.
  32. Zhang, Qingchun; Henning, Jason, Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same.
  33. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
  34. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
  35. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
  36. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
  37. Christopher John Kimble ; Steven William Steele, Series-parallel battery array conversion.
  38. Tofigh, Farshid; Kruppa, Otmar; Khan, Imtiaz; Ghahramani, Iraj; Lawton, David; Policky, Kent, Solid state power controllers including current sensing circuitry is configured to bias a general signal to a predetermined level in order to substantially eliminate the offset error in an amplifier and an A/D converter.
  39. Callanan, Robert J.; Ryu, Sei-Hyung; Zhang, Qingchun, Solid-state pinch off thyristor circuits.
  40. Floyd, Mandel; Smith, David Lewis; Kaye, Ronald J.; Aubuchon, Matthew, Thermal management of a propulsion circuit in an electromagnetic munition launcher.
  41. Tofigh, Farshid; Kruppa, Otmar; Khan, Imtiaz; Ghahramani, Iraj; Lawton, David; Policky, Kent, Voltage sensing circuitry for solid state power controllers.
  42. Zhang, Qingchun, Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices.
  43. Zhang, Qingchun; Richmond, James Theodore; Callanan, Robert J., Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits.
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