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Electroless deposition for IC fabrication 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-026/00
출원번호 US-0850251 (1992-03-11)
발명자 / 주소
  • Ting Chiu H. (Saratoga CA) Paunovic Milan (Port Washington NY)
출원인 / 주소
  • Intel Corporation (Santa Clara CA 02)
인용정보 피인용 횟수 : 109  인용 특허 : 0

초록 ▼

Electroless deposition of a conducting material on an underlying conductive region is used in a fabrication of a semiconductor device. Electroless deposition provides a selective and an additive process for forming conductive layers, filling window and providing interconnections and terminals. The c

대표청구항 ▼

In the fabrication of integrated circuits, a process for selectively depositing a conductive material on a semiconductor substrate, wherein said semiconductor substrate is selected from the group consisting of silicon and any Class III-V semiconductor, comprising the steps of: depositing a dielectri

이 특허를 인용한 특허 (109)

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