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LPCVD process for depositing titanium films for semiconductor devices 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05D-003/06
출원번호 US-0717234 (1991-06-18)
발명자 / 주소
  • Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID)
출원인 / 주소
  • Micron Technology, Inc. (Boise ID 02)
인용정보 피인용 횟수 : 124  인용 특허 : 0

초록 ▼

The present invention describes a CVD process to deposit a titanium film at a high deposition rate that has excellent uniformity and step coverage while avoiding gas phase nucleation and coating of the reactor chamber walls. The vapor of a heated liquid titanium source enters a modified, plasma enha

대표청구항 ▼

A chemical vapor deposition method for depositing a Titanium film on a silicon wafer surface during fabrication of a semiconductor device, said method comprising: a) heating a silicon wafer inside a reaction chamber by heating a wafer holder securing said silicon wafer; b) pre-mixing of H2 gas and a

이 특허를 인용한 특허 (124)

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