[특허]Light emitting diode device and method for producing same

Light emitting diode device and method for producing same 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-033/00 H01L-029/161 H01L-029/20 H01L-023/02
출원번호	US-0616768 (1990-11-19)
우선권정보	JP-0121052 (1988-05-18); JP-0015711 (1989-01-25); JP-0034282 (1989-02-14); JP-0052302 (1989-03-03)
발명자 / 주소	Niina Tatsuhiko (Osaka JPX) Ohta Kiyoshi (Osaka JPX) Nakata Toshitake (Osaka JPX) Matsushita Yasuhiko (Osaka JPX) Uetani Takahiro (Osaka JPX) Fujikawa Yoshiharu (Osaka JPX)
출원인 / 주소	Sanyo Electric Co., Ltd. (Osaka JPX 03)
인용정보	피인용 횟수 : 134 인용 특허 : 0

초록 ▼

A light emitting diode device comprises an n type silicon carbide substrate having first and second major surfaces opposite to each other at least inclined at a predetermined angle not less than 3°from a {0001}plane, an n type silicon carbide layer grown on the first major surface, a p type silicon carbide layer grown on the n type silicon carbide layer, a p type ohmic electrode formed on a partial area of the p type silicon carbide layer, and an n type ohmic electrode formed on a partial area of the second major surface. The diode element has a substantially trapezoidal form in a cross section orthogonal to the first major surface. The diode element has the side of the p type silicon carbide layer broader than the side of the second major surface and is supported at the side of the type silicon carbide layer fixed to a supporting stem.

대표청구항 ▼

A light emitting diode device comprising: a light emitting diode element and a stem supporting said diode element, said diode element including an n-type silicon carbide substrate having a crystallographic plane on which appears an atomic plane selected from the group consisting of a silicon atomic plane and a carbon atomic plane, the n-type silicon carbide substrate having first and second major surfaces opposite to each other, at least said first major surface being inclined from the crystallographic plane, an n-type silicon carbide layer grown on said first major surface, a p-type silicon carbide layer grown on said n-type silicon carbide layer, said p-type silicon carbide layer having a side which faces said stem, a first ohmic electrode formed on at least a portion of said p-type silicon carbide layer, and a second ohmic electrode formed on at least a portion of said second major surface, said diode element having a substantially trapezoidal form in a cross section orthogonal to said first major surface, with said side of said p-type silicon carbide layer being broader than said second major surface, said stem and said side of said p-type silicon carbide layer being fixed to each other, said n-type silicon carbide substrate and said first and second ohmic electrodes cooperating with each other to enable a greater amount of light to emerge out of said diode element via said second major surface free of obstruction caused by said second ohmic electrode than emerges out of said diode element via said p-type silicon carbide layer free of obstruction caused by said first ohmic electrode, said n-type silicon carbide substrate being thicker than said p-type silicon carbide layer.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Light emitting diode device and method for producing same 원문보기

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Light emitting diode device and method for producing same 원문보기

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