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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0756952 (1991-09-09) |
우선권정보 | JP-0231323 (1989-09-06) |
발명자 / 주소 |
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출원인 / 주소 |
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인용정보 | 피인용 횟수 : 338 인용 특허 : 0 |
A semiconductor device and a method for its fabrication are disclosed. In a preferred embodiment, a pattern of conductive traces is formed on a film of transfer material. A semiconductor device die is interconnected to the pattern of conductive traces and a resin body is formed around the die, one s
A semiconductor device and a method for its fabrication are disclosed. In a preferred embodiment, a pattern of conductive traces is formed on a film of transfer material. A semiconductor device die is interconnected to the pattern of conductive traces and a resin body is formed around the die, one side of the conductive traces, and the interconnecting means. The film of transfer material forms, at this stage of the process, one side of the package. The film of transfer material is then peeled from the pattern of conductive traces and the resin body to expose the other side of the pattern of conductive traces. Contact to the other side of the pattern provides electrical contact to the senmiconductor device die.
A process for fabricating a semiconductor device comprising the steps of: providing a transfer film; providing a pattern of conductive traces on said transfer film; providing a semiconductor device die; forming electrical interconnections between said pattern of conductive traces and said semiconduc
A process for fabricating a semiconductor device comprising the steps of: providing a transfer film; providing a pattern of conductive traces on said transfer film; providing a semiconductor device die; forming electrical interconnections between said pattern of conductive traces and said semiconductor device die; providing a resin material on one side of said transfer film to encapsulate said semiconductor device die, said electrical interconnections, and a portion of said pattern of conductive traces; and removing said transfer film to expose one side of said pattern of conductive traces.
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