|국가/구분||United States(US) Patent 등록|
|미국특허분류(USC)||501/32 ; 501/17 ; 501/65 ; 501/66|
|우선권정보||JP-0152608 (1990-06-13); JP-0326073 (1990-11-29)|
|발명자 / 주소|
|출원인 / 주소|
|인용정보||피인용 횟수 : 21 인용 특허 : 0|
This invention is concerned with ceramic substrates for multilayer interconnection. This invention is also concerned with a raw batch for ceramic substrates which require a calcining temperature as low as 1,000° C. or lower upon their production, are low in dielectric constant and have a coefficient of thermal expansion close to that of silicon and also with a process for the production of the substrates. This invention makes use of a raw batch which permits the use of a low resistance conductor such as Ag-Pd, Ag, Au or Cu and also the production of subs...
A raw batch for ceramic substrates, comprising, as a mixture: 40 to 80 weight percent of borosilicate glass powder, wherein borosilicate glass powder comprises, by weight, (a) 65 to 85 percent of silicon dioxide (SiO2), (b) 5 to 25 percent of boric anhydride (B2O3), (c) 0.1 to 7 percent of at least one component selected from the group consisting of lithium oxide (Li2O), sodium oxide (Na2O) and potassium oxide (K2O), (d) 0.1 to 5 percent of at least one component selected from the group consisting of magnesium oxide (MgO) and calcium oxide (CaO), and (e)...