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Trenching techniques for forming channels, vias and components in substrates 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/283
  • H01L-021/306
출원번호 US-0840428 (1992-02-24)
발명자 / 주소
  • Carey David H. (Austin TX) Pietila Douglass A. (Puyallup WA) Sigmond David M. (Austin TX)
출원인 / 주소
  • Microelectronics and Computer Technology Corporation (Austin TX 02)
인용정보 피인용 횟수 : 108  인용 특허 : 0

초록

Trenching techniques for forming a channel partially through and a via completely through the insulating layer of a substrate are disclosed. With additional steps the channel can form an electrically conductive line, an electrode of an integrated capacitor, or an optical waveguide.

대표청구항 ▼

A method for fabricating a channel and via in the insulating layer of a substrate so as to provide an insulating layer on a base with a horizontal channel in the top surface of and partially through the thickness of the insulating layer, and adjacent to the channel a vertical via in the top surface

이 특허를 인용한 특허 (108)

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