$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11C-007/00
  • G11C-011/40
출원번호 US-0636879 (1991-01-02)
발명자 / 주소
  • Blyth Trevor (Milpitas CA) Simko Richard T. (Los Altos CA)
출원인 / 주소
  • Information Storage Devices, Inc. (San Jose CA 02)
인용정보 피인용 횟수 : 116  인용 특허 : 0

초록 ▼

Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog recording and playback which provides increased resolution in the stored signal and increased accuracy and stability of the storage and readout capabilities of the device. The storage cel

대표청구항 ▼

A method of iterative writing a signal sample to a non-volatile floating gate type integrated circuit storage cell for integrated circuit analog recording and subsequent playback comprising the steps of: (a) providing a first series of programming voltage pulses of increasing amplitude to the storag

이 특허를 인용한 특허 (116)

  1. Engh Lawrence D. ; Kordesch Albert V. ; Guo Ping ; Liu Chun-Mai, Adaptive programming method and apparatus for flash memory analog storage.
    상세보기
  2. Haeberli, Andreas M.; Wong, Sau C.; So, Hock C.; Werner, Carl W.; Wang, Cheng-Yuan Michael; Wong, Leon Sea Jiunn, Adjustable circuits for analog or multi-level memory.
    상세보기
  3. Haeberli Andreas M. ; Werner Carl W. ; Wang Cheng-Yuan Michael ; So Hock C. ; Wong Leon Sea Jiunn ; Wong Sau C., Adjustable level shifter circuits for analog or multilevel memories.
    상세보기
  4. Blyth,Trevor A.; Orlando,Richard V., Analog content addressable memory (CAM) employing analog nonvolatile storage.
    상세보기
  5. Haeberli Andreas M. ; Werner Carl W. ; So Hock C. ; Wong Sau C. ; Wang Cheng-Yuan Michael ; Wong Leon Sea Jiunn, Analog memory IC with fully differential signal path.
    상세보기
  6. Smarandoiu George ; Lambrache Emil, Apparatus and method for simplified analog signal record and playback.
    상세보기
  7. Lutze,Jeffrey W.; Li,Yan; Chan,Siu L., Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling.
    상세보기
  8. Tran Hieu Van ; Khan Sakhawat M. ; Korsh George J., Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system.
    상세보기
  9. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Bitline governed approach for coarse/fine programming.
    상세보기
  10. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Bitline governed approach for program control of non-volatile memory.
    상세보기
  11. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Bitline governed approach for programming non-volatile memory.
    상세보기
  12. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Boosting to control programming of non-volatile memory.
    상세보기
  13. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Boosting to control programming of non-volatile memory.
    상세보기
  14. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Boosting to control programming of non-volatile memory.
    상세보기
  15. Tran Hieu Van, CMOS voltage regulator with diode-connected transistor divider circuit.
    상세보기
  16. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Charge packet metering for coarse/fine programming of non-volatile memory.
    상세보기
  17. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Charge packet metering for coarse/fine programming of non-volatile memory.
    상세보기
  18. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Charge packet metering for coarse/fine programming of non-volatile memory.
    상세보기
  19. Andreas M. Haeberli ; Sau C. Wong ; Hock C. So ; Carl W. Werner ; Cheng-Yuan Michael Wang ; Leon Sea Jiunn Wong, Charge pump circuit adjustable in response to an external voltage source.
    상세보기
  20. Haeberli, Andreas M.; Wong, Sau C.; So, Hock C.; Werner, Carl W.; Wang, Cheng-Yuan Michael; Wong, Leon Sea Jiunn, Charge pump circuit adjustable in response to an external voltage source.
    상세보기
  21. Lee,Shih Chung, Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing.
    상세보기
  22. Li, Yan; Fong, Yupin, Compensating for coupling based on sensing a neighbor using coupling.
    상세보기
  23. Li, Yan, Compensating for coupling during programming.
    상세보기
  24. Li, Yan, Compensating for coupling during programming.
    상세보기
  25. Li, Yan Li, Compensating for coupling during programming.
    상세보기
  26. Rumberg, Brandon David; Graham, David W., Continuous-time floating gate memory cell programming.
    상세보기
  27. Guterman, Daniel C.; Mokhlesi, Nima; Fong, Yupin, Efficient verification for coarse/fine programming of non volatile memory.
    상세보기
  28. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Efficient verification for coarse/fine programming of non-volatile memory.
    상세보기
  29. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Efficient verification for coarse/fine programming of non-volatile memory.
    상세보기
  30. Lin Chin-His,TWX, Electrically programmable semiconductor device with concurrent program and verification operations.
    상세보기
  31. Lin Chin-Hsi,TWX ; Ni Ful-Long,TWX, Electrically programmable semiconductor device with multi-level wordline voltages for programming multi-level threshold voltages.
    상세보기
  32. Hemink,Gerrit Jan, Faster programming of higher level states in multi-level cell flash memory.
    상세보기
  33. Fazio,Albert, Flash memory device of capable of sensing a threshold voltage of memory cells on a page mode of operation.
    상세보기
  34. Simko, Richard T., Floating gate nonvolatile memory circuits and methods.
    상세보기
  35. Wong Sau C., High data rate write process for non-volatile flash memories.
    상세보기
  36. Wong, Sau C., High data rate write process for non-volatile flash memories.
    상세보기
  37. Wong, Sau C., High data rate write process for non-volatile flash memories.
    상세보기
  38. Wong,Sau C., High data rate write process for non-volatile flash memories.
    상세보기
  39. Wong Sau C. (Hillsborough CA) So Hock C. (Redwood City CA), High resolution analog storage EPROM and flash EPROM.
    상세보기
  40. Wong Sau C. (Hillsborough CA) So Hock C. (Redwood City CA), High resolution analog storage EPROM and flash EPROM.
    상세보기
  41. Hemink,Gerrit Jan, High speed programming system with reduced over programming.
    상세보기
  42. Wong Sau C. ; So Hock C., High-bandwidth read and write architectures for non-volatile memories.
    상세보기
  43. Ciuperca, Romeo Ilarian, Insulated concrete battery mold, insulated passive concrete curing system, accelerated concrete curing apparatus and method of using same.
    상세보기
  44. Khan Sakhawat M., Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell.
    상세보기
  45. Khan Sakhawat M. (Sunnyvale CA), Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell.
    상세보기
  46. Sakhawat M. Khan, Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell.
    상세보기
  47. Engh Lawrence D. ; Blyth Trevor, Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program meth.
    상세보기
  48. Engh Lawrence D. (Redwood City CA) Blyth Trevor (Milpitas CA), Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method.
    상세보기
  49. Engh Lawrence D. ; Blyth Trevor, Integrated circuit system having reference cells for improving the reading of storage cells.
    상세보기
  50. Werner, Carl W.; Haeberli, Andreas M.; Wong, Leon Sea Jiunn; Wang, Cheng Yuan Michael; So, Hock C.; Wong, Sau C., Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency.
    상세보기
  51. Werner, Carl W.; Haeberli, Andreas M.; Wong, Leon Sea Jiunn; Wang, Cheng-Yuan Michael; So, Hock C.; Wong, Sau C., Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency.
    상세보기
  52. Werner,Carl W.; Haeberli,Andreas M.; Wong,Leon Sea Jiunn; Wang,Cheng Yuan Michael; So,Hock C.; Wong,Sau C., Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency.
    상세보기
  53. Werner,Carl W.; Haeberli,Andreas M.; Wong,Leon Sea Jiunn; Wang,Cheng Yuan Michael; So,Hock C.; Wong,Sau C., Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency.
    상세보기
  54. Tran Hieu Van, Linearized storage cell for integrated circuit analog signal recording and playback.
    상세보기
  55. Engh Lawrence D., Method and apparatus for adjustment and control of an iterative method of recording analog signals with on chip selecti.
    상세보기
  56. Engh Lawrence D. ; Lee May, Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application.
    상세보기
  57. Tran Hieu Van ; Brennan ; Jr. James ; Blyth Trevor ; Yoon Sukyoon, Method and apparatus for analog reading values stored in floating gate structures.
    상세보기
  58. Tran Hieu Van ; Brennan ; Jr. James ; Blyth Trevor ; Yoon Sukyoon, Method and apparatus for reading analog values stored in floating gate NAND structures.
    상세보기
  59. Tran Hieu Van ; Brennan ; Jr. James, Method and apparatus of column redundancy for non-volatile analog and multilevel memory.
    상세보기
  60. Fazio Albert ; Atwood Gregory E. ; Mi James Q., Method and circuitry for storing discrete amounts of charge in a single memory element.
    상세보기
  61. Fazio Albert ; Atwood Gregory E. ; Mi James Q., Method and circuitry for storing discrete amounts of charge in a single memory element.
    상세보기
  62. Li,Yan, Method for configuring compensation.
    상세보기
  63. Lutze,Jeffrey W.; Li,Yan; Chan,Siu L., Method for controlled programming of non-volatile memory exhibiting bit line coupling.
    상세보기
  64. Mokhlesi,Nima, Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages.
    상세보기
  65. Kamei, Teruhiko; Li, Yan, Method for programming with initial programming voltage based on trial.
    상세보기
  66. Liu, Chun-Mai; Kordesch, Albert; Chang, Ming-Bing, Method of forming memory arrays based on a triple-polysilicon source-side injection non-volatile memory cell.
    상세보기
  67. Bill Colin S. ; Haddad Sameer S., Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells.
    상세보기
  68. Mokhlesi, Nima, Non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages.
    상세보기
  69. Blyth Trevor ; Simko Richard T., Non-volatile electrically alterable semiconductor memory for analog and digital storage.
    상세보기
  70. Blyth Trevor ; Simko Richard T., Non-volatile electrically alterable semiconductor memory for analog and digital storage.
    상세보기
  71. Tran, Hieu Van; Khan, Sakhawat M., Non-volatile memory systems and methods.
    상세보기
  72. Tran, Hieu Van; Khan, Sakhawat M., Non-volatile memory systems and methods.
    상세보기
  73. Tran, Hieu Van; Khan, Sakhawat M., Non-volatile memory systems and methods including page read and/or configuration features.
    상세보기
  74. Tran, Hieu Van; Khan, Sakhawat M., Non-volatile memory systems and methods including page read and/or configuration features.
    상세보기
  75. Gongwer, Geoffrey; Guterman, Daniel C., Non-volatile memory with improved programming and method therefor.
    상세보기
  76. Gongwer,Geoffrey; Guterman,Daniel C., Non-volatile memory with improved programming and method therefor.
    상세보기
  77. Kamei, Teruhiko; Li, Yan, Non-volatile storage system with initial programming voltage based on trial.
    상세보기
  78. Kamei, Teruhiko; Li, Yan, Non-volatile storage system with initial programming voltage based on trial.
    상세보기
  79. Wong Sau C. (Hillsborough CA) So Hock C. (Redwood City CA), Pipelined record and playback for analog non-volatile memory.
    상세보기
  80. Khan Sakhawat M. ; Korsh George J., Precision programming of nonvolatile memory cells.
    상세보기
  81. Khan Sakhawat M. ; Korsh George J., Precision programming of nonvolatile memory cells.
    상세보기
  82. Khan Sakhawat M. ; Korsh George J., Precision programming of nonvolatile memory cells.
    상세보기
  83. Sakhawat M. Khan ; George J. Korsh, Precision programming of nonvolatile memory cells.
    상세보기
  84. Lee, Shih-Chung; Miwa, Toru, Program time adjustment as function of program voltage for improved programming speed in memory system.
    상세보기
  85. Holzmann Peter J. ; Brennan ; Jr. James ; Kordesch Albert, Programming flash memory analog storage using coarse-and-fine sequence.
    상세보기
  86. Atwood Gregory E. ; Fazio Albert, Programming flash memory using data stream analysis.
    상세보기
  87. Fazio Albert ; Atwood Gregory E. ; Mi James O. ; Ruby Paul, Programming flash memory using predictive learning methods.
    상세보기
  88. Fazio Albert (Los Gatos CA) Atwood Gregory E. (San Jose CA) Mi James Q. (Sunnyvale CA) Ruby Paul (Folsom CA), Programming flash memory using strict ordering of states.
    상세보기
  89. Hemink, Gertjan; Fong, Yupin, Programming non-volatile memory.
    상세보기
  90. Hemink,Gertjan; Fong,Yupin, Programming non-volatile memory.
    상세보기
  91. Brennan ; Jr. James ; Dunne Anthony ; Holzmann Peter ; Jackson Geoff ; Kordesch Albert ; Liu Chun-Mai ; Su Kung-Yen ; Tran Hieu Van, Recording and playback integrated system for analog non-volatile flash memory.
    상세보기
  92. Pan, Feng, Self-adaptive multi-stage charge pump.
    상세보기
  93. Khalid, Shahzad, Sense amplifier for multilevel non-volatile integrated memory devices.
    상세보기
  94. Keshtbod Parviz, Spacer flash cell process.
    상세보기
  95. Keshtbod Parviz (11627 Rebecca La. Los Altos Hills CA 94024), Spacer flash cell process.
    상세보기
  96. Lutze, Jeffrey, Starting program voltage shift with cycling of non-volatile memory.
    상세보기
  97. Lutze, Jeffrey, Starting program voltage shift with cycling of non-volatile memory.
    상세보기
  98. Lutze, Jeffrey, Starting program voltage shift with cycling of non-volatile memory.
    상세보기
  99. Lutze,Jeffrey, Starting program voltage shift with cycling of non-volatile memory.
    상세보기
  100. Li,Yan, System for configuring compensation.
    상세보기
  101. Mokhlesi,Nima, System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages.
    상세보기
  102. Li, Yan; Fong, Yupin, System that compensates for coupling based on sensing a neighbor using coupling.
    상세보기
  103. Li, Yan; Fong, Yupin, System that compensates for coupling based on sensing a neighbor using coupling.
    상세보기
  104. Li, Yan; Fong, Yupin, System that compensates for coupling based on sensing a neighbor using coupling.
    상세보기
  105. Li,Yan; Fong,Yupin, System that compensates for coupling based on sensing a neighbor using coupling.
    상세보기
  106. Li, Yan, System that compensates for coupling during programming.
    상세보기
  107. Li,Yan, System that compensates for coupling during programming.
    상세보기
  108. Li,Yan, System that compensates for coupling during programming.
    상세보기
  109. Lee, Shih Chung, Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing.
    상세보기
  110. Li,Yan; Zhang,Fanglin; Miwa,Toru; Moogat,Farookh, Systems utilizing variable program voltage increment values in non-volatile memory program operations.
    상세보기
  111. George J. Korsh ; Sakhawat M. Khan ; Hieu Van Tran, Testing of multilevel semiconductor memory.
    상세보기
  112. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Variable current sinking for coarse/fine programming of non-volatile memory.
    상세보기
  113. Guterman,Daniel C.; Mokhlesi,Nima; Fong,Yupin, Variable current sinking for coarse/fine programming of non-volatile memory.
    상세보기
  114. Li,Yan; Zhang,Fanglin; Miwa,Toru; Moogat,Farookh, Variable program voltage increment values in non-volatile memory program operations.
    상세보기
  115. Tran,Hieu Van; Khan,Sakhawat M., Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory.
    상세보기
  116. Wong Sau C. (Hillsborough CA) So Hock C. (Redwood City CA), Write circuits for analog memory.
    상세보기

관련 콘텐츠

섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로