IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
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| 국제특허분류(IPC7판) |
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| 출원번호 |
US-0541990
(1990-06-22)
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발명자
/ 주소 |
- Yoder Max N. (Falls Church VA)
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| 출원인 / 주소 |
- The United States of America as represented by the Secretary of the Navy (Washington DC 06)
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| 인용정보 |
피인용 횟수 :
197 인용 특허 :
0 |
초록
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An apparatus for and a method of growing thin films of the elemental semiconductors (group IVB), i.e., silicon, germanium, tin, lead, and, especially diamond, using modified atomic layer epitaxial (ALE) growth techniques are disclosed. In addition, stoichiometric and nonstoichiometric compounds of t
An apparatus for and a method of growing thin films of the elemental semiconductors (group IVB), i.e., silicon, germanium, tin, lead, and, especially diamond, using modified atomic layer epitaxial (ALE) growth techniques are disclosed. In addition, stoichiometric and nonstoichiometric compounds of the group IVB elements are also grown by a variation of the method according to the present invention. The ALE growth of diamond thin films is carried-out, inter alia, by exposing a plurality of diamond or like substrates alternately to a halocarbon reactant gas, e.g., carbon tetrafluoride (CF4), and a hydrocarbon reactant gas, e.g., methane (CH4), at substrate temperatures between 300 and 650 Celsius. A stepping motor device portion of the apparatus is controlled by a programmable controller portion such that the surfaces of the plurality of substrates are given exposures of at least 1015 molecules/cm2 of each of the reactant gases. The chemical reaction time to complete the growth of an individual atom layer is approximately 25×10-6 second.
대표청구항
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A method of atomic layer epitaxial (ALE) growth of a thin film upon a surface of a substrate of an elemental semiconductor selected from the group consisting of silicon, germanium, tin, lead and diamond comprising the steps of: hydrogenating said surface of said substrate; in a first exposing step,
A method of atomic layer epitaxial (ALE) growth of a thin film upon a surface of a substrate of an elemental semiconductor selected from the group consisting of silicon, germanium, tin, lead and diamond comprising the steps of: hydrogenating said surface of said substrate; in a first exposing step, exposing said surface of said substrate to a first reactant gas thereby growing thereon a first layer, said first exposing step including the steps of resetting the pressure acting upon and the temperature of said surface of said substrate to a growth pressure within a range of growth pressures, and to a growth temperature within a range of growth temperatures, respectively, and then exposing said surface of said substrate to a halogen-group IVB containing gas; desorbing said first layer on said substrate of all physisorbed species of said first reactant gas; in a second exposing step, exposing said first layer on said substrate to a second reactant gas thereby growing thereon a second layer, said second exposing step including the steps of maintaining the pressure acting upon and the temperature of said first layer on said substrate to said growth pressure and temperature, respectively, and then exposing said first layer on said substrate to a hydrogen-group IVB containing gas; and desorbing said second layer on said substrate of all physisorbed species of said second reactant gas.
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