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Process for thin film interconnect 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01K-003/10
출원번호 US-0784281 (1991-10-29)
발명자 / 주소
  • Sachdev Krishna G. (Hopewell Junction NY) Kellner Benedikt M. J. (Wappingers Falls NY) McGuire Kathleen M. (Wallkill NY) Sorce Peter J. (Poughkeepsie NY)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 96  인용 특허 : 0

초록 ▼

This invention relates generally to a structure and process for thin film interconnect, and more particularly to a structure and process for a multilayer thin film interconnect structure with improved dimensional stability and electrical performance. The invention further relates to a process of fab

대표청구항 ▼

A process for the fabrication of a compensator interconnect used in forming a multilayer thin-film structure, said process comprising the steps of, a) forming at least one via hole in at least one metal foil, b) securing said at least one metal foil having said at least one via hole to a partially c

이 특허를 인용한 특허 (96)

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